Related papers: Temperature dependence of ambipolar diffusion in s…
We present an innovative contactless method suitable to study in-plane thermal transport based on beam-offset frequency-domain thermoreflectance using a one-dimensional heat source with uniform power distribution. Using a one-dimensional…
This work combines the principles of the heat spreader method and imaging capability of the thermoreflectance measurements to measure the in-plane thermal conductivity of thin-films without the requirement of film suspension or multiple…
We deposit intrinsic hydrogenated amorphous silicon (a-Si:H) thin films by reactive pulsed laser deposition, for various hydrogen pressures in the 0-20 Pa range, at a low deposition temperature of 120C, and investigate the hydrogen…
In this paper we present the temperature-dependent emissivity of a silicon sample, estimated from its cool-down curve in a constant low temperature environment ($\approx$ 82K). The emissivity value follow a linear dependency in the 120-260…
We describe an optical method to directly measure position-dependent thermal diffusivity of reflective single crystal samples across a broad range of temperatures for condensed matter physics research. Two laser beams are used, one as a…
Laser melting of semiconductors has been observed for almost 40 years; surprisingly, it is not well understood where most theoretical simulations show a laser-induced thermal process. $\textit{Ab initio}$ nonadiabatic simulations based on…
Buffer gas cooling with a $^4$He gas is used to perform laser-absorption spectroscopy of the $^{12}$C$_2$H$_2$ ($\nu_1+\nu_3$) band at cryogenic temperatures. Doppler thermometry is first carried out to extract translational temperatures…
It has been shown by means of impurity diffusion simulation that ion-implanted boron redistribution at the annealing temperatures 800^{\circ}C and lower is governed by the long-range migration of nonequilibrium impurity interstitials…
We report on the temperature dependence of microwave-induced resistance oscillations in high-mobility two-dimensional electron systems. We find that the oscillation amplitude decays exponentially with increasing temperature, as…
Silicon double paddle osillators (DPO) have been successfully used for measuring the elastic properties of amorphous films down to 10 mK (see for example \cite{Fefferman16,Liu14}). Until now, our group has used a wet dilution refrigerator…
We investigate the temperature dependence of optical absorption spectra of one-dimensional (1D) and two-dimensional (2D) Mott insulators by using an effective model in the strong-coupling limit of a half-filed Hubbard model. In the…
We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our…
The relaxation dynamics of hot carriers in silicon (100) is studied via a novel holistic approach based on phase-resolved transient absorption spectroscopy with few-cycle optical pulses. After excitation by a sub-5 fs light pulse, strong…
We report measurements of the zero-field resistivity in dilute 2D electron system in silicon at temperatures down to 35 mK. This extends the previously explored range of temperatures by almost an order of magnitude. On the metallic side,…
We study the metal-insulator transition in individual self-assembled quantum wires and report optical evidences of metallic liquid condensation at low temperatures. Firstly, we observe that the temperature and power dependence of the single…
We report low-temperature measurements of dissipation in megahertz-range, suspended, single-crystal nanomechanical oscillators. At millikelvin temperatures, both dissipation (inverse quality factor) and shift in the resonance frequency…
We present a computational study of the void-induced microstructure in amorphous silicon ($\it a$-Si) by generating ultra-large models of $\it a$-Si with a void-volume fraction of 0.3$\%$, as observed in small-angle x-ray scattering (SAXS)…
The effects of ambipolar diffusion on the linear stability of weakly ionised accretion discs are examined. Earlier work on this topic has focused on axial magnetic fields and perturbation wavenumbers. We consider here more general field and…
We report the infrared dielectric properties of $\alpha$-quartz in the temperature range from $1.5\ \mathrm{K}$ to $200\ \mathrm{K}$. Using an infrared free-electron laser, far-infrared reflectivity spectra of a single crystal $y$-cut were…
The diffusion path and diffusivity of oxygen in crystalline silicon are computed using an empirical interatomic potential which was recently developed for modelling the interactions between oxygen and silicon atoms. The diffusion path is…