Related papers: Diffusion based degradation mechanisms in giant ma…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
A mechanical equivalent system is introduced to mimic the behavior of multilayer structures with diffusive spin transport. The analogy allows one to use existing mechanical intuition to predict the influence of various parameters on spin…
Motivated by recent experiments, where the tunnel magnetoresitance (TMR) of a spin valve was measured locally, we theoretically study the distribution of TMR along the surface of magnetized electrodes. We show that, even in the absence of…
It is well known that skyrmions can be driven using spin-orbit torques due to the spin-Hall effect. Here we show an additional contribution in multilayered stacks arises from vertical spin currents due to inter-layer diffusion of a spin…
The effect of undesirable high-frequency free-layer switching in magnetic multilayer systems, referred to as back hopping, is investigated by means of the spin-diffusion model. A possible origin of the back-hopping effect is found to be the…
We have studied the Giant Magnetoresistance (GMR) for laterally confined multilayers, e.g., layers of wires, using the classical Boltzmann equation in the current-in-plane (CIP) geometry. For spin-independent specularity factors at the…
The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we…
Different damping mechanisms in graphene nanoresonators are studied: charges in the substrate, ohmic losses in the substrate and the graphene sheet, breaking and healing of surface bonds (Velcro effect), two level systems, attachment…
GeMn granular thin films are a unique and promising material for spintronics applications due to large positive magnetoresistance (MR). Previous studies on GeMn have suggested that the large MR is related to nanospinodal decomposition of…
We investigate spin-orbit torques on magnetization in an insulating ferromagnetic (FM) layer that is brought into a close proximity to a topological insulator (TI). In addition to the well-known field-like spin-orbit torque, we identify an…
It is shown that spin valves under suitable symmetry conditions exhibit an ON-OFF response to a spin battery. While a spin valve driven by a charge battery displays the usual GMR (Giant Magneto-Resistance), a pure spin current or pure spin…
The layered organic compounds, kappa-(BEDT-TTF)_2Cu[N(CN)_2X (X=Cl, Br) are metals at ambient temperatures. At low temperatures, the Cl compound is a weakly ferromagnetic Mott insulator while the isostructural Br compound is a…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
Magnetoresistive spin valve sensors based on the giant- (GMR) and tunnelling- (TMR) magnetoresisitve effect with a flux-closed vortex state free layer design are compared by means of sensitivity and low frequency noise. The vortex state…
High-stress silicon nitride nanostrings are a promising system for sensing applications because of their ultra-high mechanical quality factors (Qs). By performing thermomechanical calibration across multiple vibrational modes, we are able…
We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the free layer by the mechanism of incoherent magnon emission…
We describe a numerical approach to modeling magnetoelectric effects generated by spin-orbit coupling in inhomogeneous diffusive 2D superconductors. It is based on direct minimization of the free energy of diffusion modes, including their…
We theoretically investigate spin-dependent transport in a TMD-based vertical spin valve, taking WSe$_2$ as a representative example. Using effective Hamiltonians for the heterostructure and the Landauer formula, we derive the transmission…
We reveal the giant magnetoresistance induced by the spin-polarized current in the ferromagnet (F_1)/topological insulator (TI)/ferromagnet (F_2) junction, where two ferromagnets are deposited on the diffusive surface of the TI. We can…
A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to…