Related papers: Diffusion based degradation mechanisms in giant ma…
We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates. Metal-Oxide-Semiconductor (MOS) devices with these…
We develop a three dimensional semiclassical theory which generalizes the Valet-Fert model in order to account for non-collinear systems with magnetic texture, including e.g. domain walls or magnetic vortices. The theory allows for spin…
We study theoretically the spin transport in a device in which the active layer is an organic film with numerous deep in-gap levels serving as traps. A carrier, diffusing between magnetized injector and detector, spends a considerable…
Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find nearly a ten-fold increase of SMR in W/CoFeB compared to previously studied…
The difference in the density of states for up- and down-spin electrons in a ferromagnet (F) results in spin-dependent scattering of electrons at a ferromagnet / nonmagnetic (F/N) interface. In a F/N/F spin-valve, this causes a…
We examine and identify magnetoresistance mechanisms in 2D system containing a sizable concentration of magnetic ions. We argue that some of these mechanisms can serve as a tool to measure spin polarization. Lack of spin degeneracy and…
New losses mechanism in monolayer graphene nanoresonators caused by dissipative intravalley currents stipulated by the synthetic electric fields is considered. These fields are generated by time-dependent gauge fields arising in graphene…
The existence of backscattering-immune spin-wave modes is demonstrated in magnetic thin films of nano-scale thickness. Our results reveal that chiral Magneto Static Surface Waves (cMSSWs), which propagate perpendicular to the magnetization…
Using the transfer-matrix approach and solving time-domain differential equations, we analyze the loss compensation mechanism in multilayer systems composed of an absorbing transparent conductive oxide and dielectric doped with an active…
We obtain in single van-der-Waals layer of MnBi2Te4 the spin-valve-like ferromagnet/spin glass (SG)/ferromagnet architecture, where the switch of individual spin states in the SG-like layer appears as the resistance switch behavior. The…
A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 {\Omega}, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room…
We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a…
We report on the electrical and magneto-transport properties of the contact formed between polycrystalline NiMnSb thin films grown using pulsed laser deposition (PLD) and n-type degenerate InSb (100) substrates. A negative giant…
A new non-dissipative mechanism is proposed for the saturation of the axisymmetric magnetorotational (MRI) instability in thin Keplerian disks that are subject to an axial magnetic field. That mechanism relies on the energy transfer from…
We investigate ferromagnetic resonance (FMR) modulation in $d$-wave superconductor (SC)/ferromagnetic insulator (FI) bilayer systems theoretically. The modulation of the Gilbert damping in these systems reflects the existence of nodes in…
One essential feature in MRAM cells is the spin torque efficiency, which describes the ratio of the critical switching current to the energy barrier. Within this paper it is reported that the spin torque efficiency can be improved by a…
We use a ferromagnetic voltage probe model to study the influence of inelastic scattering on giant magnetoresistance and current-induced torques in ferromagnetic and antiferromagnetic metal spin valves. The model is based on the Green's…
The use of spin waves as a signal carrier requires developing the functional elements allowing for multiplexing and demultiplexing information coded at different wavelengths. For this purpose, we propose a system of thin ferromagnetic…
We investigate the spin-transfer torque in a magnetic multilayer structure by means of a spin-diffusion model. The torque in the considered system, consisting of two magnetic layers separated by a conducting layer, is caused by a…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…