Related papers: InAs Nanowire MOS Capacitors
The separation of hot carriers in semiconductors is of interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages for effective hot-carrier…
Metal nanoparticles are the most frequently used nanostructures in plasmonics. However, besides nanoparticles, metal nanowires feature several advantages for applications. Their elongation offers a larger interaction volume, their…
We carried out first-principles density functional theory calculations of hydrogen and oxygen adsorption and diffusion on subnanometer MoS nanowires. The nanowires are robust against adsorption of hydrogen. On the other hand, interaction…
Developing sustainable battery electrode manufacturing methods is particularly pressing for alloying-type active materials, such as silicon, which often require additional energy-intensive and solvent-based processing to reinforce them with…
Transistors based on various types of non-silicon nanowires have shown great potential for a variety of applications, especially for those require transparency and low-temperature substrates. However, critical requirements for circuit…
We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different…
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs…
Superconducting devices are prone to reduced performance caused by impurities and defects along the edges of their wires, which can lead to local current crowding. In this study, we explored the use of helium ion irradiation to modify the…
We report on observation of coherent electron transport in suspended high-quality InAs nanowire-based devices. The InAs nanowires were grown by low-temperature gold-assisted vapor-liquid-solid molecular-beam-epitaxy. The high quality of the…
In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires…
A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide…
This review article discusses and compares various techniques for fabricating metal nanowires. We begin by defining what we mean by a nanowire, and why such nanostructures are of scientific and technological interest. We then present…
Nanoscale surface analysis of 1 micrometer thick high entropy alloys (HEAs) was carried out using nano-IR for hyperspectral imaging and single point spectroscopy in the 700-1700 1/cm spectral range. Nano-IR is based on the detection of…
Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility…
Solar cells have generated a lot of interest as a potential source of clean renewable energy for the future. However a big bottleneck in wide scale deployment of these energy sources remain the low efficiency of these conversion devices.…
Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…
Nanoscale molecular junctions are celebrated nanoelectronic devices for mimicking several electronic functions including rectifiers, sensors, wires, switches, transistors, and memory but capacitive behavior is nearly unexplored. Capacitors…
A few-micron thick structure that shows nearly 100% resonant polarized absorptance at a predefined midinfrared wavelength is designed and simulated. Like resonant-cavity enhanced photodetector structure, it contains a thin absorber enclosed…
We observe intense pulses of far-infrared electromagnetic radiation emitted from arrays of InAs nanowires. The THz radiation power efficiency of these structures is about 15 times higher compared to a planar InAs substrate. This is…
This review focuses on the investigation and enhancement of the thermoelectric properties of semiconducting nanowires (NWs). NWs are nanostructures with typical diameters between few to hundreds of nm and length of few to several microns,…