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We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device structure. We identify which resonances are likely candidates…
Suppression of diabatic transitions in quantum adiabatic evolution stands as a significant challenge for ground state preparations. Counterdiabatic driving has been proposed to compensate for diabatic losses and achieve shortcut to…
We theoretically investigate the doping evolution of the electronic state of high-Tc cuprate on both sides of the half-filling on the basis of the three-dimensional three-band Hubbard model with a layered structure using the Hartree-Fock…
We present an extended discussion of a recently proposed theoretical approach for off-resonance tunneling transport. The proofs and the arguments are explained at length and simple analogies and illustrations are used where possible. The…
Shortcut to adiabaticity (STA) techniques have the potential to drive a system beyond the adiabatic limits. Here, we present a robust and efficient method for wireless power transfer (WPT) between two coils based on the so-called…
We propose a protocol to realize fast high-fidelity quantum state transfer between distant optomechanical interfaces connected by a continuum waveguide. The scheme consists of three steps: two accelerating adiabatic processes joined by a…
We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart,…
We present dynamical transport calculations based on a tight-binding approximation to adiabatic time-dependent density functional theory (TD-DFTB). The reduced device density matrix is propagated through the Liouville-von Neumann equation.…
Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous…
The quasiparticle method, which has achieved a great success in solid state electronics and crystal lattice vibration, is adopted to study the solid state ion transport. A general recipe is put forward to map the classical solid state ion…
Diamond is an outstanding semiconductor for extreme electronics, yet reproducible n-type doping remains a long-standing challenge. Here we demonstrate stable n-type single-crystal diamond grown in a single step by a precisely controlled…
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented.…
Towards the scalable realization of a quantum computer, a quantum charge-coupled device (QCCD) based on ion shuttling has been considered a promising approach. However, the processes of detaching an ion from an array, reintegrating it, and…
Adiabatic transport of information is a widely invoked resource in connection with quantum information processing and distribution. The study of adiabatic transport via spin-half chains or clusters is standard in the literature, while in…
Ion transport is an essential operation in some models of quantum information processing, where fast ion shuttling with minimal motional excitation is necessary for efficient, high-fidelity quantum logic. While fast and cold ion shuttling…
Digitizing an adiabatic evolution is a strategy able to combine the good performance of gate-based quantum processors with the advantages of adiabatic algorithms, providing then a hybrid model for efficient quantum information processing.…
Ion-trapped Quantum Charge-Coupled Device (QCCD) architectures have emerged as a promising alternative to scale single-trap devices by interconnecting multiple traps through ion shuttling, enabling the execution of parallel operations…
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which…
Controlled adiabatic transfer of a single electron through a chain of quantum dots has been recently achieved in GaAs and Si/SiGe based quantum dots, opening prospects for turning stationary spin qubits into mobile ones, and solving in this…
In organic electronics, conductivity doping is used primarily to eliminate charge injection barriers in organic light-emitting diodes, organic photovoltaics and other electronic devices. Therefore, research on conductivity doping is…