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Donor-based spin qubit offers a promising silicon quantum computing route for building large-scale qubit arrays, attributed to its long coherence time and advancements in nanoscale donor placement. However, the state-of-the-art device…
Developing devices that can reliably and accurately demonstrate the principles of superposition and entanglement is an on-going challenge for the quantum computing community. Modeling and simulation offer attractive means of testing early…
A method for high-fidelity coherent adiabatic transport in a zig-zag tight-binding chain, based on application of two external periodic driving fields, is theoretically proposed. The method turns out to be robust against imperfections and…
Silicon carbide (SiC) is an essential material for next generation semiconductors and components for nuclear plants. It's applications are strongly dependent on its thermal conductivity, which is highly sensitive to microstructures.…
We propose a quantum dot (QD) implementation of a quantum state transfer channel. The proposed channel consists of N vertically stacked QDs with the nearest neighbor tunnel coupling, placed in an axial electric field. We show that the…
Spin qubits in silicon donors offer a promising platform for quantum computing due to their long coherence times and semiconductor compatibility. However, scaling donor-based spin qubits in silicon is fundamentally challenged by frequency…
Charge-based qubits have been proposed as fundamental elements for quantum computers. One commonly proposed readout device is the single-electron transistor (SET). SETs can distinguish between localized charge states, but lack the…
In the real-time manipulation of quantum states, it is necessary to dynamically control the parameters of the system's Hamiltonian. We have studied the survival probability during the conveyance of a particle by a trapping potential, where…
Organic dopants are frequently used to surface-dope inorganic semiconductors. The resulted hybrid inorganic-organic materials have a crucial role in advanced functional materials and semiconductor devices. In this article, we study charge…
We investigate adiabatic quantum pumping of Dirac fermions on the surface of a strong 3D topological insulator. Two different geometries are studied in detail, a normal metal -- ferromagnetic -- normal metal (NFN) junction and a…
We consider quantum statistics of charge transmitted through a mesoscopic device in the adiabatic pumping process. A general formula for the distribution function of the transmitted charge in terms of the time-dependent S-matrix is…
We theoretically investigate the phenomena of adiabatic quantum charge pumping through a normal-insulator-superconductor-insulator-normal (NISIN) setup of silicene within the scattering matrix formalism. Assuming thin barrier limit, we…
We present a highly efficient molecular dynamics scheme for calculating the concentration profile of dopants implanted in group-IV alloy, and III-V zinc blende structure materials. Our program incorporates methods for reducing computational…
We utilize Bardeen's tunneling theory to calculate intra- and interorbital hopping integrals between phosphorus donors in silicon using known orbital wave functions. While the two-donor problem can be solved directly, the knowledge of…
Tunneling is often claimed to be the key mechanism underlying possible speedups in quantum optimization via quantum annealing (QA), especially for problems featuring a cost function with tall and thin barriers. We present and analyze…
Quantum adiabatic transfer is widely used in quantum computation and quantum simulation. However, the transfer speed is limited by the quantum adiabatic approximation condition, which hinders its application in quantum systems with a short…
Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…
We study adiabatic pumping through a two-level quantum dot with spin-orbit coupling. Using a diagrammatic real-time approach, we calculate both the pumped charge and spin for a periodic variation of the dot's energy levels in the limit of…
3T TRAM with doping profile (P+PNPNN+) is experimentally demonstrated on a silicon photonic platform. By using additional implant layers, this device provides excellent memory performance compared to the conventional structure (PNPN). TCAD…
The coupling of a metallic Carbon nanotube to a surface acoustic wave (SAW) is proposed as a vehicle to realize quantized adiabatic charge transport in a Luttinger liquid system. We demonstrate that electron backscattering by a periodic SAW…