Related papers: Spin memristive systems
The memristors are expected to be fundamental devices for neuromorphic systems and switching applications. For example, the device made of a sandwiched layer of poly(N-vinylcarbazole) and reduced graphene composite between asymmetric…
Memristors, initially introduced in the 1970s, have received increased attention upon successful synthesis in 2008. Considerable work has been done on modeling and applications in specific areas, however, very little is known on the…
In recent times, neural networks have been gaining increasing importance in fields such as pattern recognition and computer vision. However, their usage entails significant energy and hardware costs, limiting the domains in which this…
Reasoned by its dynamical behavior, the memristor enables a lot of new applications in analog circuit design. Since some realizations are shown (e.g. 2007 by Hewlett Packard), the development of applications with memristors becomes more and…
We consider effects of the spin degree of freedom on the nanomechanics of a single-electron transistor (SET) containing a nanometer-sized metallic cluster suspended between two magnetic leads. It is shown that in such a…
Memristive neuromorphic systems are designed to emulate human perception and cognition, where the memristor states represent essential historical information to perform both low-level and high-level tasks. However, current systems face…
We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…
Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage…
Mesoscopic conductors are electronic systems of sizes in between nano- and micrometers, and often of reduced dimensionality. In the phase-coherent regime at low temperatures, the conductance of these devices is governed by quantum…
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…
Spin-electronic devices are poised to become part of mainstream microelectronic technology .Downsizing them, however, faces the intrinsic difficulty that as ferromagnets become smaller, it becomes more difficult to stabilize their magnetic…
We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the…
We develop a theory of spin noise in semiconductor nanowires considered as prospective elements for spintronics. In these structures spin-orbit coupling can be realized as a random function of coordinate correlated on the spatial scale of…
Acting as artificial synapses, two-terminal memristive devices are considered fundamental building blocks for the realization of artificial neural networks. Organized into large arrays with a top-down approach, memristive devices in…
Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…
In this letter, a reactance-less mono-stable oscillator is introduced for the first time using memristors. By replacing bulky inductors and capacitors with memristors, the novel mono-stable oscillator can be an area-efficient solution for…
Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tuneable conductivity properties enable the imitation of synaptic behaviour. Multipore nanofluidic memristors have shown their…
We formulate a theoretical description of antiferromagnetic magnons and their transport in terms of an associated pseudospin. The need and strength of this formulation emerges from the antiferromagnetic eigenmodes being formed from…
Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used as a tool…
We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…