Related papers: Spin memristive systems
Transtor and memtranstor are the fourth basic linear and memory elements, which allows direct coupling of charge (q) to magnetic flux ({\phi}) via linear and non-linear ME effects, respectively. It is found here that large variation of…
We study in this paper the parallel spin current in an antiferromagnetic semiconductor thin film where we take into account the interaction between itinerant spins and lattice spins. The spin model is an anisotropic Heisenberg model. We use…
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
We propose a setup which allows to couple the electron spin degree of freedom to the mechanical motions of a nanomechanical system not involving any of the ferromagnetic components. The proposed method employs the strain induced spin-orbit…
We experimentally demonstrate a proof-of-principle implementation of an almost ideal memristor - a two-terminal circuit element whose resistance is approximately proportional to the integral of the input signal over time. The demonstrated…
We discuss the physical properties of realistic memristive, memcapacitive and meminductive systems. In particular, by employing the well-known theory of response functions and microscopic derivations, we show that resistors, capacitors and…
Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and…
The dynamics of memristive device in response to neuron-like signals and coupling electronic neurons via memristive device has been investigated theoretically and experimentally. The simplest experimental system consists of electronic…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…
A memristor is a nonlinear two-terminal electrical element that incorporates memory features and nanoscale properties, enabling us to design very high-density artificial neural networks. To enhance the memory property, we should use…
Efficient operation of intelligent machines in the real world requires methods that allow them to understand and predict the uncertainties presented by the unstructured environments with good accuracy, scalability and generalization,…
A powerful time series analysis modeling technique is presented to describe cycle-to-cycle variability in memristors. These devices show variability linked to the inherent stochasticity of device operation and it needs to be accurately…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and…
Brain-inspired computing architectures attempt to emulate the computations performed in the neurons and the synapses in human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through…
We suggest an approach to use memristors (resistors with memory) in programmable analog circuits. Our idea consists in a circuit design in which low voltages are applied to memristors during their operation as analog circuit elements and…
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes…
We study the implications of the anisotropic magnetic resistance on permalloy nanowires, and in particular on the property of the resistance depending on the type of lattice. We discuss how the internal spin configuration of artificial spin…