Related papers: Threshold fields for antiparallel ferroelectric do…
Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This…
We report on the dynamics of a conducting domain wall under applied dc and ac voltages. These dynamics are modeled for a thin film that hosts an ideal charged domain wall via a combination of time-dependent Ginzburg-Landau equations for the…
The advent of wurtzite ferroelectrics is enabling a new generation of ferroelectric devices for computer memory that has the potential to bypass the von Neumann bottleneck, due to their robust polarization and silicon compatibility.…
At variance with structural ferroic phase transitions which give rise to macroscopic tensors coupled to macroscopic fields, criteria defining antiferroelectric (AFE) phase transitions are still under discussion due to the absence of…
We study domain-wall excitations in two-dimensional random-bond Ising spin systems on a square lattice with side length L, subject to two different continuous disorder distributions. In both cases an adjustable parameter allows to tune the…
Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its…
We report coherent X-ray imaging of antiferromagnetic (AFM) domains and domain walls in MnBi$_2$Te$_4$, an intrinsic AFM topological insulator. This technique enables direct visualization of domain morphology without reconstruction…
Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and…
We theoretically investigate the dynamics of atomic domain walls (DWs) in antiferromagnets driven by a spin-orbit field. For a DW with the width of a few lattice constants, we identify a Peierls-like pinning effect, with the depinning field…
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics…
Antiferromagnetic spintronics is an emerging research field which aims to utilize antiferromagnets as core elements in spintronic devices. A central motivation toward this direction is that antiferromagnetic spin dynamics is expected to be…
We consider a classical field configuration, corresponding to intersection of two domain walls in a supersymmetric model, where the field profile for two parallel walls at a finite separation is known explicitly. An approximation to the…
The understanding of antiferromagnetic domain walls, which are the interface between domains with different N\'eel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future…
Domain walls in antiferromagnets under a spin-polarized current present dynamical behavior that is not observed in ferromagnets, and it is tunable by the current polarization. Precessional dynamics is obtained for perpendicular spin…
Local-probe imaging of the ferroelectric domain structure and auxiliary bulk pyroelectric measurements were conducted at low temperatures with the aim to clarify the essential aspects of the orbitally driven phase transition in GaMo4S8, a…
Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…
Motivated by the recent theoretical and experimental progress in the heavy fermion system UCoGe, we study ferromagnetic chiral superconductors in the presence of magnetic domains. Within mean field approximations, it is shown that chiral…
The control and steering of light at nanometre length scales is crucial for the development of both fundamental science and nanophotonic technologies. Recent advancements have been achieved by exploiting various crystalline anisotropies,…
Using Landau-Ginzburg-Devonshire theory we calculated numerically the static conductivity of both inclined and counter domain walls in the uniaxial ferroelectrics-semiconductors of n-type. We used the effective mass approximation for the…
We study the electronic and transport properties of a network of domain walls between insulating domains with opposite valley Chern numbers. We find that the network is semi-metallic with Dirac dispersion near the charge neutrality point…