Related papers: Threshold fields for antiparallel ferroelectric do…

Ferroelectric random access memory cells (FeRAMs) have reached 450 x 400 nm production (0.18 micron^2) at Samsung with lead zirconate-titanate (PZT), 0.13 micron^2 at Matsushita with strontium bismuth tantalate (SBT), and comparable sizes…

Analytical description of domain structure morphology and phase diagrams of ferroelectric nanoparticles is developed in the framework of Landau Ginzburg Devonshire approach. To model realistic conditions of incomplete screening of…

Chemically ordered B2 FeRh exhibits a remarkable antiferromagnetic-ferromagnetic phase transition that is first order. It thus shows phase coexistence, usually by proceeding though nucleation at random defect sites followed by propagation…

In this paper we describe domain walls appearing in a thin, nematic liquid crystal sample subject to an external field with intensity close to the Fr\'eedericksz transition threshold. Using the gradient theory of the phase transition…

Current induced domain wall (DW) motion has been investigated in a 600-nm wide nanowire using multilayer film with a structure of Ta(5 nm)/Pd(5 nm)/[CoFe(0.4 nm)/Pd(1.2 nm)]$_{15}$/Ta(5 nm)in terms of anomalous Hall effect measurements. It…

A self-contained theory of the domain wall dynamics in ferromagnets under finite electric current is presented. The current is shown to have two effects; one is momentum transfer, which is proportional to the charge current and wall…

We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel…

The scattering of the eletron by a domain wall in a nano-wire is studied perturbatively to the lowest order. The correction to the thermodaynamic potential of the electron system due to the scattering is calculated from the phase shift. The…

We consider a model with two real scalar fields which admits phantom domain wall solutions. We investigate the structure and evolution of these phantom domain walls in an expanding homogeneous and isotropic universe. In particular, we show…

Magnetic domain walls (DWs) in nanostructures are low-dimensional objects that separate regions with uniform magnetisation. Since they can have different shapes and widths, DWs are an exciting playground for fundamental research, and became…

Motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain wall motion through the ferroelectric material is however hindered by pinning on…

We fabricate ferromagnetic nanowires with constrictions whose cross section can be reduced gradually from 100 nm to the atomic scale and eventually to the tunneling regime by means of electromigration. These devices are mechanically stable…

Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of…

A closed form analytical expression for the magnetization vector distribution within the cross-tie domain wall in an isotropic ferromagnetic thin film is given. The expression minimizes the exchange energy functional exactly, and the…

Charge resistance and spin torque are generated by coherent carrier transport through ferromagnetic 360 degree domain walls, although they follow qualitatively different trends than for 180 degree domain walls. The charge resistance of 360…

We study ferroelectric domain walls in barium titanate. We search for structurally nontrivial, so-called non-Ising domain walls, where the Polarisation is non-zero along the entire wall. Our approach enables us to find solutions for domain…

The magnetic domain wall motion driven by a magnetic field is studied in (Ga,Mn)As and (Ga,Mn)(As,P) films of different thicknesses. In the thermally activated creep regime, a kink in the velocity curves and a jump of the roughness exponent…

We develop a theory to compute the domain-wall magnetoresistance (DWMR) in antiferromagnetic (AFM) metals with different spin structures. In the diffusive transport regime, the DWMR can be either {\it negative} or positive depending on the…

Many-particle systems driven out of thermal equilibrium can show properties qualitatively different from any thermal state. Here, we study a ferrimagnet in a weak oscillating magnetic field. In this model, domain walls are not static, but…

We generalize domain-wall dynamics to the case of translationally noninvariant ferromagnetic nanowires. The obtained equations of motion make the description of the domain-wall propagation more realistic by accounting for the variations…