Related papers: Threshold fields for antiparallel ferroelectric do…
We present a first-principles density functional study of the structural, electronic and magnetic properties of the ferroelectric domain walls in multiferroic BiFeO3. We find that domain walls in which the rotations of the oxygen octahedra…
The coupling between a current and a domain wall is examined. In the presence of a finite current and the absence of a potential which breaks the translational symmetry, there is a perfect transfer of angular momentum from the conduction…
We develop the theory of magnetic domain wall motion in coupled double-layer systems where electrons can hop between the layers giving rise to an antiferromagnetic coupling. We demonstrate that the force from the interlayer coupling drives…
It is theoretically demonstrated that a displacement of a pinned domain wall, typically of order of $\mu$m, can be driven by use of an ac current which is below threshold value. The point here is that finite motion around the pinning center…
Three dimensional neutron depolarization measurements have been carried out on single-crystalline UGe2 between 4 K and 80 K in order to determine the average ferromagnetic domain size d. It is found that below T_C = 52K uniaxial…
Within linear continuum theory, no magnetic texture can propagate faster than the maximum group velocity of its spin waves. Here we report a transient regime due to the appearance of additional antiferromagnetic textures that breaks the…
Ferroelastic materials (materials with switchable spontaneous strain) often are centrosymmetric, but their domain walls are always polar, as their internal strain gradients cause polarization via flexoelectricity. This polarization is…
The finite screening length by real metallic electrodes, albeit very small (<1A), results in finite depolarizing field that tends to split the film into domains. In very thin ferroelectric films the domain structure reduces to sinusoidal…
The contribution of a built-in electric field to ferroelectric phase transition in asymmetric ferroelectric tunnel junctions is studied using a multiscale thermodynamic model. It is demonstrated in details that there exists a critical…
Ferroelectrics form domain patterns that minimize their energy subject to imposed boundary conditions. In a linear, constrained theory, that neglects domain wall energy, periodic domain patterns in the form of multi-rank laminates can be…
Ferroelectric charged domain walls are known for their high electrical conductivity, making them promising candidates for applications in modern electronics. A remarkably high conductivity and nominal charge density has been found in the…
The domain wall nucleation and motion processes in Permalloy nanowires with a thickness gradient along the nanowire axis have been studied. Nanowires with widths, w = 250 nm to 3 um and a base thickness of t = 10 nm were fabricated by…
We show that, contrary to common belief, the depolarizing electric field generated by bound charges at thin-film surfaces can have a substantial impact on the domain structure of an improper ferroelectric with topological defects. In…
Ferromagnetism is an iconic example of a first-order phase transition taking place in spatially extended systems and is characterized by hysteresis and the formation of domain walls. In this paper we demonstrate that an extended atomic…
Topological defects can act as local impurities that seed cosmological phase transitions. In this paper we study the case of domain walls, and how they can affect the electroweak phase transition in the Standard Model extended with a…
Sufficient conditions of the existence of electric or magnetic walls on dielectric interfaces are given for a multizone uniform dielectric waveguiding system. If one of two adjacent dielectric zones supports a TEM field distribution while…
The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging…
We propose a physical mechanism for fine-tuning the phase of a domain wall around the equilibrium directions involving the application of an external field and a spin polarized current in opposite directions. In this way, the position of…
We study theoretically the influence of the underlying domain microstructure on the electromechanical properties of ferroelectrics. Our calculations are based on a continuum approach that incorporates the long-range elastic and…
Ferroelectric domain walls hold great promise for innovative applications in ferroelectric devices. However, the underlying mechanisms behind the observed giant conductance of charged domain walls remain poorly understood. Using a…