Related papers: Single Carbon Nanotube Transistor at GHz Frequency

We characterize radio frequency detection in a high-quality metallic single-walled carbon nanotube. At a bath temperature of 77 K, only bolometric (thermal) detection is seen. At a bath temperature of 4.2 K and low bias current, the…

The dependence of the interwall conductance on distance between walls and relative positions of walls are calculated at the low voltage by Bardeen method for (n,n)@(2n,2n) double-walled carbon nanotubes (DWCNTs) with n = 5, 6, ..., 10. The…

Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light…

An elongation method based on ab initio quantum chemistry approaches is presented. It allows to study electronic structures and coherent electron transportation properties of single-walled carbon nanotubes (SWCNTs) up to 22nm in length…

We study the microwave impedance of extremely high aspect ratio (length/width ~ 5,000) superconducting niobium nitride nanowires. The nanowires are fabricated in a compact meander geometry that is in series with the center conductor of a 50…

The heat capacity of bundles of closed-cap single-walled carbon nanotubes (SWNT) with one-dimensional chains of nitrogen molecules adsorbed in the grooves has been first experimentally studied at temperatures from 2K to 40K using an…

Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent…

This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible…

The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions…

Intrinsic carrier transport properties of single-walled carbon nanotubes are probed by two parallel methods on the same individual tubes: the contactless dielectric force microscopy (DFM) technique and the conventional field-effect…

We study theoretically the electronic structure, transport and optical properties for a zigzag single-wall carbon nanotube connected to two normal conductor leads under the irradiation of an external electromagnetic field at low…

We calculate the conductance variation of several metallic carbon nanotubes as their end is being dipped into a liquid metal electrode, where experiments have shown an achievable conductance close to 1 quantum of conductance. The calculated…

We measure the conductivity spectra of thin films comprising bundled single-walled carbon nanotubes (CNTs) of different average lengths in the frequency range 0.3-1000 THz and temperature interval 10-530 K. The observed temperature-induced…

A single-walled carbon nanotube presents a seamless cylindrical graphene surface and is thus an ideal adsorption substrate for investigating the physics of atoms and molecules in two dimensions and approaching the one-dimensional limit.…

As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…

We report on the design and performance of an on-chip microwave circulator with a widely (GHz) tunable operation frequency. Non-reciprocity is created with a combination of frequency conversion and delay, and requires neither permanent…

We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube…

Single electron transistors (SETs) fabricated from single-walled carbon nanotubes (SWNTs) can be operated as highly sensitive charge detectors reaching sensitivity levels comparable to metallic radio frequency SETs (rf-SETs). Here we…

High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide…

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…