Related papers: Radiation Induced Effects in a Monolithic Active P…
In this work, the effects of $^\text{60}$Co $\gamma$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI{2}{\mega Gy}. Both macroscopic ($I$--$V$,…
We report the influence of crystalline defects introduced by 6 MeV $^{16}$O$^{3+}$ irradiation on the critical current densities J$_c$ and flux creep rates in 1.3 $\mu$m thick GdBa$_2$Cu$_3$O$_{7-d}$ coated conductor produced by…
We consider the effect of metal electrodes on the polarizability and nucleation of metal phases responsible for the operations of the emerging solid state memory. Our analysis is based on the image charge approach. We find results for point…
We have theoretically studied the effect of nuclear mass on electron localization in dissociating H_2^+ and its isotopes subjected to a few-cycle 3-{\mu}m laser pulse. Compared to the isotopic trend in the near-infrared regime, our results…
We report on the measurement of the neutron radiation hardness of silicon photomultipliers (SiPMs) manufactured by Hamamatsu Corporation in Japan and SensL in Ireland. Samples from both companies were irradiated by neutrons created by a 1…
Pulsed laser excitation causes the luminescence of Nitrogen Vacancy centers in diamond to unexpectedly decrease with increasing pulse energy. This decrease is observed in both the negatively charged and neutral centers and is caused by…
The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO$_2$. A concentration of 10 ppb can be detected by monitoring the current injection at fixed voltage. However, we show that the…
The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference…
Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied…
Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a…
Single-crystal diamond substrates presenting a high concentration of negatively charged nitrogen-vacancy centers (NV-) are on high demand for the development of optically pumped solid-state sensors such as magnetometers, thermometers or…
We present experimental and theoretical results for the variation of the O 1s intensity from a NiO(001) surface as the excitation energy is varied through the Ni 2p1/2,3/2 absorption resonances, and as the incidence angle of the radiation…
This paper presents experimental data and analysis of the structural damage caused by swift-heavy ion irradiation of single-crystal diamond. The patterned buried structural damage is shown to generate, via swelling, a mirror-pattern on the…
Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation damage up to these high doses, MOS capacitors and…
We investigate the radiation tolerance of p-type silicon pad sensors, indigenously developed for use in high-fluence environments relevant to heavy-ion collider experiments, cosmic-ray observatories, and deep-space missions. Single-pad test…
Silicon Photomultipliers (SiPMs) are quickly replacing traditional photomultiplier tubes (PMTs) as the readout of choice for gamma-ray scintillation detectors in space. While they offer substantial size, weight and power saving, they have…
In this work, we introduce the theoretical framework of the phonon-mediated Migdal effect for neutrino-nucleus scattering in semiconductors, considering both the Standard Model and the presence of the neutrino magnetic moment. We calculate…
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the…
The Pixel Detector (PXD) of the Belle II experiment at superKEKB accelerator in Japan is based in the DEPFET technology. Two layers of 8+12 modules at a radius of 13 and 22 mm will give a spatial resolution below 10 mm. The radiation level…
We demonstrate that an applied electric field causes piezoelectric distortion across single molecular monolayers of oligopeptides. We deposited self-assembled monolayers ~1.5 nm high onto smooth gold surfaces. These monolayers exhibit…