Related papers: Microwave Rectification by a Carbon Nanotube Schot…
We report on the preparation of carbon nanotube quantum dots using superconducting electrodes made of niobium. Gate-controllable supercurrents with values of up to 30 nA are induced by the proximity effect. The IV-curves are hysteretic at…
This letter proposes a high-efficiency dual-band class-F rectifier for wireless power transmission (WPT). The rectifier comprises a dual-band harmonic termination network, a dual-band matching network, a single Schottky diode, and a dc pass…
We report measurements of the rectification of microwave radiation (0.7-20 GHz) at the boundary between two-dimensional electron systems separated by a narrow gap on a silicon surface for different temperatures, electron densities and…
Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. We report…
Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with…
We propose a polarization-insensitive and high-efficiency plasmonic silicon Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission. Our photodiode is based on a…
High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…
We present a silicon optomechanical nanobeam design with a dynamically tunable acoustic mode at 10.2 GHz. The resonance frequency can be shifted by 90 kHz/V^2 with an on-chip capacitor that was optimized to exert forces up to 1 $\mu$N at 10…
We have investigated the microwave response of nanotube Josephson junctions at 600-900 MHz at microwave powers corresponding to currents from 0 to $2\times I_{\mathrm C}$ in the junction. Compared with theoretical modeling, the response of…
Ga2O3 Schottky barrier diodes featuring a field plate and a composite SiO2/SiNx dielectric layer beneath the field plate were fabricated, achieving a breakdown voltage of 2.4 kV at room temperature. Electrical performance and degradation…
This paper presents the design, the fabrication and the characterization of Schottky graphene/silicon photodetectors, operating at both 2 micron and room temperature. The graphene/silicon junction has been carefully: characterized device…
A systematic investigation of the electrical characteristics of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cumulative doses reaching up to 5 Mrad (Si). Initial exposure…
Rectification of electromagnetic fields into direct current (DC) is pivotal for energy harvesting, wireless charging, and next-generation communication technologies. The superconducting diode effect, which exploits the nonreciprocal…
We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance…
$\beta$-Ga$_2$O$_3$ is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exceptional material properties. However, challenges such as the…
We demonstrate the operation of superconducting coplanar microwave resonators in a very large frequency range up to 50 GHz. The resonators are fabricated from niobium thin films on sapphire substrates and optimized for these high…
Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such transistors display strong ambipolar conduction, even when…
Here we demonstrate an on-chip electro-optic frequency shifter that is precisely controlled using only a single-tone microwave signal. This is accomplished by engineering the density of states of, and coupling between, optical modes in…
We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is…
We measure the small signal, 1 GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical…