Related papers: Technologies for 3D Heterogeneous Integration
The demand for the three-dimensional (3D) integration of electronic components is on a steady rise. The through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D…
The semiconductor industry's rapid advancement pushes conventional two-dimensional technology to its utmost limitations in terms of scaling, performance, and cost factors. These challenges drive the usage of 3D technology in the production…
The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer…
As semiconductor manufacturing advances from the 3-nm process toward the sub-nanometer regime and transitions from FinFETs to gate-all-around field-effect transistors (GAAFETs), the resulting complexity and manufacturing challenges continue…
Three-dimensional (3D) photonic integrated circuits (PIC) are emerging as an indispensable scheme for high density and multifunctional photonic systems. However, the wafer-scale scaling of PICs towards a 3D configuration is constrained by…
3D stacked technology has emerged as an effective mechanism to overcome physical limits and communication delays found in 2D integration. However, 3D technology also presents several drawbacks that prevent its smooth application. Two of the…
With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in two-dimensional (2D)…
As the field of superconducting quantum computing advances from the few-qubit stage to larger-scale processors, qubit addressability and extensibility will necessitate the use of 3D integration and packaging. While 3D integration is…
The Through Silicon Via (TSV) process developed by Silex provides down to 30 micrometers pitch for through wafer connections in up to 600 micrometers thick substrates. Integrated with MEMS designs it enables significantly reduced die size…
With the globalization of manufacturing and supply chains, ensuring the security and trustworthiness of ICs has become an urgent challenge. Split manufacturing (SM) and layout camouflaging (LC) are promising techniques to protect the…
We review threats and selected schemes concerning hardware security at design and manufacturing time as well as at runtime. We find that 3D integration can serve well to enhance the resilience of different hardware security schemes, but it…
To overcome the well-known memory bottleneck of AI chips, 3D stacked architectures that employ advanced packaging technology with high-density through-silicon vias (TSVs) pins have proven to be a promising solution. The 3D-stacked AI chip…
We demonstrate a hybrid laser microfabrication approach, which combines the technical merits of ultrafast laser-assisted chemical etching and carbon dioxide laser-induced in-situ melting, for centimeter-scale and bonding-free fabrication of…
Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order…
Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive…
Monolithic Three-Dimensional Integrated Circuits (M3D-IC) has become an attractive option to increase the transistor density. In M3D-IC, substrate layers are realized on top of previous layers using sequential integration techniques. Recent…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…
The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation…
The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses…
Silicon-based integrated photonics has demonstrated significant advances in miniaturization and performance, yet critical challenges remain in achieving efficient on-chip communication at high bandwidths. Plasmonic devices on silicon and…