Related papers: Copper Electrodeposition for 3D Integration
3D-Integration is a promising technology towards higher interconnect densities and shorter wiring lengths between multiple chip stacks, thus achieving a very high performance level combined with low power consumption. This technology also…
Two-dimensional (2D) materials offer opportunities to explore both fundamental science and applications in the limit of atomic thickness. Beyond the prototypical case of graphene, other 2D materials have recently come to the fore. Of…
3D interconnects have emerged as a solution to address the scaling issues of interconnect bandwidth and the memory wall problem in high-performance computing (HPC), such as High-Bandwidth Memory (HBM). However, the copper-based electrical…
The semiconductor industry's rapid advancement pushes conventional two-dimensional technology to its utmost limitations in terms of scaling, performance, and cost factors. These challenges drive the usage of 3D technology in the production…
3-D integrated circuits (3-D ICs) offer performance advantages due to their increased bandwidth and reduced wire-length enabled by through-silicon-via structures (TSVs). Traditionally TSVs have been considered to improve the thermal…
The Through Silicon Via (TSV) process developed by Silex provides down to 30 micrometers pitch for through wafer connections in up to 600 micrometers thick substrates. Integrated with MEMS designs it enables significantly reduced die size…
With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in two-dimensional (2D)…
As superconducting qubit circuits become more complex, addressing a large array of qubits becomes a challenging engineering problem. Dense arrays of qubits benefit from, and may require, access via the third dimension to alleviate…
Vacuum-forming is a common manufacturing technique for constructing thin plastic shell products by pressing heated plastic sheets onto a mold using atmospheric pressure. Vacuum-forming is ubiquitous in packaging and casing products in…
The demand for the three-dimensional (3D) integration of electronic components is on a steady rise. The through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D…
Two-dimensional (2D) Transition Metal Chalcogenides (TMCs) have attracted tremendous interest from both the scientific and technological communities due to their variety of properties and superior tunability through layer number,…
CONSPECTUS: Two-dimensional (2D) compound materials are promising materials for use in electronics, optoelectronics, flexible devices, etc. because they are ultrathin and cover a wide range of properties. Among all methods to prepare 2D…
3D integration technologies are seeing widespread adoption in the semiconductor industry to offset the limitations and slowdown of two-dimensional scaling. High-density 3D integration techniques such as face-to-face wafer bonding with…
Despite over a decade of intense research efforts, the full potential of two-dimensional transition metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration…
In this work, we proposed a new 3D integration technology: the Flip 3D integration (F3D), consisting of the 3D transistor stacking, the 3D dual-sided interconnects, the 3D die-to-die stacking and the dual-sided Monolithic 3D (M3D). Based on…
In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary…
Heterogeneous manycore architectures are the key to efficiently execute compute- and data-intensive applications. Through silicon via (TSV)-based 3D manycore system is a promising solution in this direction as it enables integration of…
Three-dimensional (3D) photonic integrated circuits (PIC) are emerging as an indispensable scheme for high density and multifunctional photonic systems. However, the wafer-scale scaling of PICs towards a 3D configuration is constrained by…
Information processing devices operating in the quantum mechanical regime strongly rely on the quantum coherence of charge carriers. Studies of electronic dephasing in conventional metallic and semiconductor systems have not only paved the…
Droplet-confined electrodeposition enables a precise deposition of three dimensional, nanoscopic and high purity metal structures. It aspires to fabricate intricate microelectronic devices, metamaterials, plasmonic structures and…