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Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($\epsilon_r$) values relative to AlN. $\epsilon_r$ values of ~17 to 21 for Sc contents of…

The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO2, is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001)…

Mesoscale and Nanoscale Physics · Physics 2011-02-18 Nicola Ferralis , Roya Maboudian , Carlo Carraro

We report high pressure X-ray diffraction and a detailed systematic Raman measurements on $ReS_2$ sample, which is mechanically exfoliated from a single crystal. A few new Bragg peaks are observed to emerge above 6 GPa indicating a…

Materials Science · Physics 2020-05-20 Pinku Saha , Bishnupada Ghosh , Aritra Mazumder , Konstantin Glazyrin , Goutam Dev Mukherjee

A detailed high pressure study is carried out on 1T$^\prime$ MoTe$_{2}$ using X-ray diffraction(XRD) and Raman spectroscopy measurements upto about 30.5 GPa. High pressure XRD measurements show no structural transition. All the lattice…

Materials Science · Physics 2020-01-07 Bishnupada Ghosh , Pinku Saha , Goutam Dev Mukherjee

While vertical GaN-on-silicon architectures promise a transformative leap in cost-effective power electronics and high-resolution micro-LEDs, their deployment remains bottlenecked by the high electrical resistance of conventional epitaxial…

Materials Science · Physics 2026-05-04 Fumio Kawamura , Takeyoshi Onuma , Kazutaka Mitsuishi

High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered…

Materials Science · Physics 2017-01-04 B. Li , W. G. Chen , X. Guo , W. K. Ho , X. Q. Dai , J. F. Jia , M. H. Xie

We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al$_{2}$O$_{3}$. Arrays with nanowire diameters and spacings…

The thermodynamic stability of germanium tin $\mathrm{Ge_{1-x}Sn_x}$ alloys is investigated across the composition range $0 \le x \le 1$ by applying density functional theory (DFT) together with the cluster expansion formalism (CE). It is…

Materials Science · Physics 2021-03-02 Alfonso Sanchez-Soares , Conor O'Donnell , James C. Greer

TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN](n) multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on…

Materials Science · Physics 2007-05-23 H. B. Nie , S. Y. Xu , S. J. Wang , L. P. You , Z. Yang , C. K. Ong , J. Li , T. Y. F. Liew

We report the reduction in residual stress of AlN thin films and also the crystal structure, surface morphology and nanomechanical properties of magnetron sputtered as a function of substrate temperature (Ts, 35 - 600 ?C). The residual…

Materials Science · Physics 2017-07-25 Padmalochan Panda , R. Ramaseshan , N Ravi , G. Mangamma , Feby Jose , S. Dash , K. Suzuki , H. Suematsu

The pressure dependent phonon modes of predominant wurtzite InAs nanowires has been investigated in a diamond anvil cell under hydrostatic pressure up to 58 GPa. The TO and LO at Gamma point and other optical phonon frequencies increase…

Mesoscale and Nanoscale Physics · Physics 2015-06-18 Dipanwita Majumdar , Abhisek Basu , Goutam Dev Mukherjee , Daniele Ercolani , Lucia Sorba , Achintya Singha

A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth…

Materials Science · Physics 2009-11-11 V. Holy , Z. Matej , O. Pacherova , V. Novak , M. Cukr , K. Olejnik , T. Jungwirth

We report on the recrystallization of 200 nm thick as-grown Yttrium Iron Garnet (Y_3.4 Fe_4.6 O_12) films on (111) face of Gadolinium Gallium Garnet (GGG) single crystals by post-deposition annealing. Epitaxial conversion of the as-grown…

Applied Physics · Physics 2019-03-25 Ravinder Kumar , Z. Hossain , R. C. Budhani

Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies…

The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…

An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found that Ga segregates at the surface during the first stages of…

Materials Science · Physics 2016-07-20 Stéphane Vézian , Benjamin Damilano , Franck Natali , Mohamed Al Khalfioui , Jean Massies

Several SrTiO3 (STO) thin films without electrodes processed by pulsed laser deposition, of thicknesses down to 40 nm, were studied using infrared transmission and reflection spectroscopy. The complex dielectric responses of polar phonon…

Materials Science · Physics 2009-04-29 D. Nuzhnyy , J. Petzelt , S. Kamba , T. Yamada , M. Tyunina , A. K. Tagantsev , J. Levoska , N. Setter

Using infrared (IR) and Raman spectroscopies combined with high-resolution x-ray diffraction, we address several controversial aspects of altermagnetic $\alpha$-MnTe. We show that mechanical stress applied to crystals of this material…

The recent observation of superconducting state at atomic scale has motivated the pursuit of exotic condensed phases in two-dimensional (2D) systems. Here we report on a superconducting phase in two-monolayer crystalline Ga films…

Crystalline defects are generally regarded as static phonon scatterers that irreversibly suppress thermal transport. Here we show that elastic strain can dynamically and reversibly reorganize dislocation ensembles and strongly modify heat…