Related papers: Controlled fabrication of single electron transist…
Rhodium (Rh) is found similar to Palladium (Pd) in making near-ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d > ~ 1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and…
A top-gated single wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements…
We fabricated reproducible high transparency superconducting contacts consisting of superconducting Ti/Al/Ti trilayers to gated single-walled carbon nanotubes (SWCNTs). The reported semiconducting SWCNT have normal state differential…
Single electron transistors (SETs) are very sensitive electrometers and they can be used in a range of applications. In this paper we give an introduction to the SET and present a full quantum mechanical calculation of how noise is…
We propose the concept of a quantized single-electron source based on the interplay between Coulomb blockade and magnetic flux-controllable superconducting proximity effect. We show that flux dependence of the induced energy gap in the…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
Ever since the landmark discovery of single-walled carbon nanotubes (SWNTs) in 1993, they have been considered as ideal materials for any kind of application based on their outstanding properties (e.g. mechanical strength, thermal…
We describe a technique for fabricating nanometer-scale gaps in Pt wires on insulating substrates, using individual single-walled carbon nanotubes as shadow masks during metal deposition. More than 80% of the devices display current-voltage…
We report a measurement on quantum capacitance of individual semiconducting and small band gap SWNTs. The observed quantum capacitance is remarkably smaller than that originating from density of states and it implies a strong electron…
The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances in electron optics and…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
Photoconductivity of single-crystalline selenium nanotubes (SCSNT) under a range of illumination intensities of a 633nm laser is carried out with a novel two terminal device arrangement at room temperature. It's found that SCSNT forms…
Carbon nanotube (CNT) electromechanical resonators have demonstrated unprecedented sensitivities for detecting small masses and forces. The detection speed in a cryogenic setup is usually limited by the CNT contact resistance and parasitic…
Structure transformation by heat treatment in single-walled carbon nanotubes (SWCNT) is investigated using molecular dynamics simulation. The critical temperature for the collapse of pure SWCNT is as high as 4655 K due to strong covalent…
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…
An elongation method based on ab initio quantum chemistry approaches is presented. It allows to study electronic structures and coherent electron transportation properties of single-walled carbon nanotubes (SWCNTs) up to 22nm in length…
The effect of purification on room temperature electronic transport properties of single-wall carbon nanotubes (SWNT) was studied by submerging samples into liquid mercury. The conductance plots of purified SWNTs showed plateaus, indicating…
The low-energy electronic structure of metallic single-walled carbon nanotube (SWNT) in an external electric field perpendicular to the tube axis is investigated. Based on tight-binding approximation, a field-induced energy gap is found in…
A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel…