Related papers: Controlled fabrication of single electron transist…
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…
Transistors made up of carbon nanotubes CNT have demonstrated excellent current-voltage characteristics which outperform some high-grade silicon-based transistors. A continuously tunable energy barrier across semiconductor interfaces is…
We demonstrate the physical principles for the construction of a nanometer sized magnetoresistance device based on the Aharonov-Bohm effect. The proposed device is made of a short single-walled carbon nanotube (SWCNT) placed on a substrate…
The structures and symmetries of single-walled carbon nanotubes (SWNTs) are introduced in detail. The physical properties of SWNTs induced by their symmetries can be described by tensors in mathematical point of view. It is found that there…
Single-walled carbon nanotubes (SWNTs) have been coated with gold and platinum nanoparticles either by microwave treatment or by the click reaction and the Raman spectra of these SWNT-metal nanoparticle composites have been investigated.…
Applications based on Single Walled Carbon Nanotube (SWNT) are good example of the great need to continuously develop metrology methods in the field of nanotechnology. Contact and interface properties are key parameters that determine the…
We calculate the thermoelectric power (or thermopower) of many semiconducting single wall carbon nanotubes (s-SWNTs) within a diameter range 0.5-1.5 nm by using the Boltzmann transport formalism combined with an extended tight-binding…
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional…
We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion…
The advancements of nanomaterials or nanostructures have enabled the possibility of fabricating multifunctional materials that hold great promises in engineering applications. The carbon nanotube (CNT)-based nanostructure is one…
A fresh look on carbon-based transistor channel materials like single-walled carbon nanotubes (CNT) and graphene nanoribbons (GNR) in future electronic applications is given. Although theoretical predictions initially promised that GNR…
Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone (PES) and…
We report an experimental observation of the backaction of a Single Electron Transistor (SET) measuring the Coulomb staircase of a single electron box. As current flows through the SET, the charge state of the SET island fluctuates. These…
We discuss magnetotransport measurements on individual single-wall carbon nanotubes with low contact resistance, performed as a function of temperature and gate voltage. We find that the application of a magnetic field perpendicular to the…
Recently experiments showed that nodal structural defects are readily formed in the synthesis of single-walled carbon nanotubes (SWNTs) and consequently, SWNTs are likely to deviate from well-defined seamless tubular structures. Here, using…
We report measurements on ropes of Single Walled Carbon Nanotubes (SWNT) in low-resistance contact to non-superconducting (normal) metallic pads, at low voltage and at temperatures down to 70 mK. In one sample, we find a two order of…
Tunneling of single electrons has been thoroughly studied both theoretically and experimentally during last ten years. By the present time the basic physics is well understood, and creation of useful single-electron devices becomes the…
A simple process for chemical vapor deposition of ultra SD single wall carbon nanotubes has been developed. In this process, an iron nitrate nonahydrate solution in isopropyl alcohol with a concentration of 400 ug/mlit was used to catalyze…
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…
We show that small numbers of electrons, including a single electron, can be held in a novel electrostatic trap above the surface of superfluid helium. A potential well is created using microfabricated electrodes in a 5 micron diameter pool…