Related papers: Negative Differential Resistance Induced by Mn Sub…
Superconductivity has recently been observed in Sr-doped NdNiO2 films grown on SrTiO3. Whether it is caused by or related to the interface remains an open question. To address this issue, we use density functional theory calculation and…
A large variety of transport properties have been observed at the interface between the insulating oxides SrTiO3 and LaAlO3 such as insulation, 2D interface metallicity, 3D bulk metallicity, Kondo scattering, magnetism and…
Transport properties of SrTiO$_3$-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below $R_{\Box}$ $\sim$ 10 k$\Omega$ at low temperatures,…
Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal…
The charge transfer antiferromagnetic (T$_{N}$ =220 K) insulator EuNiO$_{3}$ undergoes, at ambient pressure, a temperature-induced metal insulator MI transition at T$_{MI}$=463 K. We have investigated the effect of pressure (up to p~20 GPa)…
The interface between the two band insulators SrTiO3 and LaAlO3 unexpectedly has the properties of a two dimensional electron gas. It is even superconducting with a transition temperature, Tc, that can be tuned using gate bias Vg, which…
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
Polarized neutron reflectivity measurements of a ferromagnetic [(LaMnO$_3$)$_{11.8}$/(SrMnO$_3$)$_{4.4}$]$_6$ superlattice reveal a modulated magnetic structure with an enhanced magnetization at the interfaces where LaMnO$_3$ was deposited…
Electronic, lattice, and spin interactions at the interfaces between crystalline complex transition metal oxides can give rise to a wide range of functional electronic and magnetic phenomena not found in bulk. At hetero-interfaces, these…
Possible ferromagnetism induced in otherwise non-magnetic materials has been motivating intense research in complex oxide heterostructures. Here we show that a confined magnetism is realized at the interface between SrTiO3 and two…
Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the…
The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 {\deg}C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the…
The resistivity of the two dimensional electron gas that forms at the interface of strontium titanate with various oxides is sensitive to irradiation with visible light. In this letter we present data on the interface between the band gap…
Doping Bi$_2$Se$_3$ by magnetic ions represents an interesting problem since it may break the time reversal symmetry needed to maintain the topological insulator character. Mn dopants in Bi$_2$Se$_3$ represent one of the most studied…
The LaAlO3/SrTiO3 (LAO/STO) interface hosts a rich range of electronic phenomena, including unconventional electron pairing that in quantum dots gives rise to a negative effective charging energy U. Here, we show freestanding LAO/STO…
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…
Heterointerfaces of SrTiO$_{3}$ with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO$_{3}$/SrTiO$_{3}$, support a high carrier…
The resistivity as a function of temperature, magnetic field and its orientation for atomically flat SrTiO3\LaAlO3 interfaces with carrier densities of ~3*10^13 cm^-2 is reported. At low magnetic fields superconductivity is observed below…
Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined…
We use resonant soft x-ray scattering to study electronic reconstruction at the interface between the Mott insulator LaMnO3 and the "band" insulator SrMnO3. Superlattices of these two insulators were shown previously to have both…