Related papers: Negative Differential Resistance Induced by Mn Sub…
Resonant soft x-ray absorption measurements at the O K edge on a SrMnO3/LaMnO3 superlattice show a shoulder at the energy of doped holes, which corresponds to the main peak of resonant scattering from the modulation in the doped hole…
Anomalous low temperature electronic and structural behaviour has been discovered in PbRuO3. The structure (space group Pnma, a = 5.56314(1), b = 7.86468(1), c = 5.61430(1) A) and metallic conductivity at 290 K are similar to those of…
First-principles density-functional calculations reveal a large spin-phonon coupling in cubic SrMnO$_{3}$, with ferromagnetic ordering producing a polar instability. Through combination of this coupling with the strain-polarization coupling…
We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn…
Recent experiments have shown that transition metal oxide heterostructures such as SrTiO$_3$-based interfaces, exhibit large, gate tunable, spintronic responses. Our theoretical study showcases key factors controlling the magnitude of the…
The electronic properties of the polar interface between insulating oxides is a subject of great current interest. An exciting new development is the observation of robust magnetism at the interface of two non-magnetic materials LaAlO_3…
We demonstrate an Nb$_{2}$O$_{5}$/$\beta$-Ga$_{2}$O$_{3}$ metal-insulator-semiconductor (MIS) hetero-junction diode with Nb$_{2}$O$_{5}$ as the high-k dielectric insulator for more efficient electric field management resulting in enhanced…
We investigate the magnetic interactions in Sr3NiPtO6, characterized to be a spin liquid using ab initio calculations. The results reveal a novel metal to insulator transition due to finite exchange interaction strength; the magnetic…
Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and…
The effect of $^{16}$O $\to$ $^{18}$O isotope substitution on electrical resistivity and magnetic susceptibility of Sm$_{1-x}$Sr$_x$MnO$_3$ manganites is analyzed. It is shown that the oxygen isotope substitution drastically affects the…
The interface between the two insulating oxides SrTiO$_3$ and LaAlO$_3$ gives rise to a two-dimensional electron system with intriguing transport phenomena, including superconductivity, which are controllable by a gate. Previous…
We have measured magnetization M(T,H), electrical resistivity ro(T,H), thermal conductivity k(T,H), and thermopower S(T,H) of polycrystalline samples of Nd1-xEuxNiO3; 0 <= x <= 0.35; as a function of temperature and external magnetic field.…
Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for…
High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emergent Internet of Things (IOT) arena. Here, we…
An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped…
We have studied the structural, electronic and magnetic properties of spinel $\rm Co_3O_4$(111) surfaces and their interfaces with ZnO (0001) using density functional theory (DFT) within the Generalized Gradient Approximation with on-site…
We explore the magnetotransport and thermoelectric (Seebeck and Nernst coefficients) properties of Mn3SnC an antiperovskite magnetic Nodal line semimetal. Mn3SnC shows paramagnetic (PM) to concurrent antiferromagnetic (AFM)/ferromagnetic…
Disorder induced by chemical inhomogeneity and Jahn-Teller (JT) distortions is often observed in mixed valence perovskite manganites. The main reasons for the evolution of this disorder are connected with the cationic size differences and…
Magnetoresistance (MR) anisotropy in LaAlO3/SrTiO3 (LAO/STO) interfaces is compared between samples prepared in high oxygen partial pressure (PO2) of 10-4 mbar exhibiting quasi-two-dimensional (quasi-2D) electron gas and low PO2 of 10-6…
The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controlling a metal/superconductor-to-insulator transition, as well as…