Related papers: Channel-Width Dependent Enhancement in Nanoscale F…
The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the…
Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a…
We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating…
Transconductance is a central figure of merit in field-effect transistors, typically governed by charge accumulation and carrier mobility. In multilayer WSe$_2$ transistors, however, it is shown to carry a nonlinear transport signature of…
Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm…
The boundaries of waveguides and nanowires have drastic influence on their coherent scattering properties. Designing the boundary profile is thus a promising approach for transmission and band-gap engineering with many applications. By…
We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires…
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…
High refractive index semiconductor nanowires have recently been demonstrated experimentally as an efficient platform for enhancing the signal in fluorescence-based biosensors. Here, we study through modelling how a vertical GaP nanowire…
The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field effect devices (FED) by…
We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $\mu$m…
One of the main limiting factors in the carrier mobility in semiconductor nanowires is the presence of deep trap levels. While deep-level transient spectroscopy (DLTS) has proved to be a powerful tool in analysing traps in bulk…
Although strong modulation of interfacial electron concentrations by the relative acidity of surface additives has been suggested, direct observation of corresponding changes in surface conductivity, crucial for understanding the role of…
The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution…
We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of the electronic structure. Comparison of the measured…
The attachment of semiconducting nanoparticles to carbon nanotubes is one of the most challenging subjects in nanotechnology. Successful high coverage attachment and control over the charge transfer mechanism and photo-current generation…
The mobility of charge carriers in a semiconductor nanowire is explored as a function of increasing radius, assuming low temperatures where impurity scattering dominates. The competition between increased cross-section and the concurrent…
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of…
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…
We present the fabrication of nanoscale superconducting quantum interference devices (SQUIDs) at the apex of wireframe tips on self-aligned superconducting cantilever probes. The probes are made on silicon wafers using molding techniques in…