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We report a strategy to design nanoscale cold-source field-effect transistors (CS-FETs) with bias-independent sub-60 mV/dec subthreshold swing (SS). By first-principles calculations and quantum-transport simulations, we reveal that the…
The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator…
We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical…
We present low-temperature measurements of low-loss superconducting nanowire-embedded resonators in the low-power limit relevant for quantum circuits. The superconducting resonators are embedded with superconducting nanowires with widths…
We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases,…
We consider a single-electron transistor in the form of a ferromagnetic dot in contact with normal-metal and pinned ferromagnetic leads. Microwave-driven precession by the dot induces a pumped electric current. In open circuits, this…
Understanding the movement of charge within organic semiconducting films is crucial for applications in photo-voltaics and flexible electronics. We study the sensitivity of the electrical conductance of a silicon nanowire to changes of…
We study the size dependence of thermal conductivity in nanoscale semiconducting systems. An analytical formula including the surface scattering and the size confinement effects of phonon transport is derived. The theoretical formula gives…
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…
Nanoscale electromechanical coupling provides a unique route towards control of mechanical motions and microwave fields in superconducting cavity electromechanical devices. Though their successes in utilizing the optomechanical or…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
We find that the dependence on temperature and magnetic field of the electrical resistance of diffusive ferromagnetic nano-wires measured with superconducting electrodes changes drastically with the distance, $L$, between the…
We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization (WL) description in…
Enhanced photocurrent is demonstrated in a junction-less photodetector with nanowires embedded in its channel. The fabricated photodetector consists of a large area for efficient absorption of incident light with energy band engineering…
The proximity effect in mesoscopic ferromagnet/superconductor ($FS$) Ni/Al structures of various geometries was studied experimentally on both $F$- and $S$-sides of the structures. Samples with a wide range of interface transparency were…
Silicene (a monolayer of silicon atoms) is a quantum spin-Hall insulator, which undergoes a topological phase transition into other insulators by applying external field such as electric field, photo-irradiation and antiferromagnetic order.…
Quantized conductance is reported in high-crystalline tin oxide (SnO2) nanobelt back-gate field-effect transistors, at low temperatures. The quantized conductance was observed as current oscillations in the drain current vs. gate voltage…
Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility…