Related papers: Non-adiabadic charge pumping in a hybrid SET trans…
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that…
The Andreev current through an ultrasmall NIS junction is calculated in a systematic way by means of a nonlinear response approach basing on the elementary Hamiltonian of quasiparticle tunneling. The voltage dependence of current and…
Clean one-dimensional electron systems can exhibit quantized conductance. The plateau conductance doubles if the transport is dominated by Andreev reflection. Here, we report quantized conductance observed in both Andreev and normal-state…
We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of…
We study the transport properties of a hybrid nanostructure composed of a ferromagnet, two quantum dots, and a superconductor connected in series. By using the non-equilibrium Green's function approach, we have calculated the electric…
We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies $f$ up to $1$ GHz. The measurements were performed with a new picoammeter instrument, traceable to the Josephson…
We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…
We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the…
We investigate parametric pumping of a spin-polarized current through a nearly-closed quantum dot in a perpendicular magnetic field. Pumping is achieved by tuning the tunnel couplings to the left and right lead - thereby operating the…
We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a…
Coherent tunneling processes of multiple Cooper pairs across a Josephson junction give rise to higher harmonics in the current phase relation. In this work, we propose and study Josephson junctions based on…
We study Cooper pair transport through a quantum point contact between a superconductor and a quantum Hall edge state at integer and fractional filling factors. We calculate the tunnelling current and its finite-frequency noise to the…
Hybrid turnstiles have proven to generate accurate single-electron currents. The usual operation consists of applying a periodic modulation to a capacitively coupled gate electrode and requires a non-zero DC source-drain bias voltage. Under…
We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant…
We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe$_{3}$ crystal with a charge density wave (CDW). The…
The current noise spectrum of a single-electron transistor (SET) coupled to a nano-mechanical resonator is calculated in the classical regime. Correlations between the charge on the SET island and the position of the resonator give rise to…
An analog neural network computing engine based on CMOS-compatible charge-trap transistor (CTT) is proposed in this paper. CTT devices are used as analog multipliers. Compared to digital multipliers, CTT-based analog multiplier shows…
We study bistability in the electron transport through a ring of N coupled quantum dots with two orbitals in each dot. One orbital is localized (called b orbital) and coupling of the b orbitals in any two dots is negligible; the other is…