Related papers: Non-adiabadic charge pumping in a hybrid SET trans…
Andreev reflection, which corresponds to the tunneling of two electrons from a metallic lead to a superconductor lead as a Cooper pair (or vice versa), can be exploited to measure high frequency noise. A detector is proposed, which consists…
State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation…
Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on…
In the "ballistic" regime, the transport across a normal metal (N)/superconductor (S) point-contact is dominated by a quantum process called Andreev reflection. Andreev reflection causes an enhancement of the conductance below the…
We present a study of the Andreev reflections in superconductor/ferromagnet nanostructured point contacts. The experimental data are analyzed in the frame of a model with two spin-dependent transmission coefficients for the majority and…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, i.e., the controlled transport of individual…
We derive self-consistent expressions of current and noise for single-electron transistors driven by time-dependent perturbations. We take into account effects of the electrical environment, higher-order co-tunneling, and time-dependent…
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
We have measured and modeled, using three different approaches, the tunneling current in a Nb/NbxOy/Ni planar tunnel junction. The experimental data could be fitted and the correct current polarization could be extracted using a simple…
A detailed investigation of the non-equilibrium steady-state electric and thermoelectric transport properties of a quantum dot coupled to the normal metallic and s-wave superconducting reservoirs (N-QD-S) are provided within the Coulomb…
Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance…
We present both full quantum mechanical and semiclassical calculations of above threshold ionization (ATI) of a hydrogen atom in the tunneling regime by a few-cycle linearly polarized infrared laser pulse. As a quantum treatment, we applied…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit…
Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders…
We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonperturbatively by means of path integral Monte Carlo…
We study single electron transport across a single Bi dopant in a Silicon Nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin $I=9/2$ affects the transport characteristics of the device. In the sequential…
Josephson oscillations generated by a SQUID were used to measure photon assisted tunneling in a superconducting single electron tunneling (SET) transistor. The SQUID was fabricated only a few microns from the SET transistor. The close…