Related papers: On the calculation of Schottky contact resistivity
Peculiarities of transport properties of three- and two-dimensional half-metallic ferromagnets are investigated, which are connected with the absence of spin-flip scattering processes. The temperature and magnetic field dependences of…
Contraction analysis considers the distance between two adjacent trajectories. If this distance is contracting, then trajectories have the same long-term behavior. The main advantage of this analysis is that it is independent of the…
Self-consistent modelling based on local spin-density formalism is employed to calculate conductance of quantum point contacts at finite temperatures. The total electrostatic potential exhibits spin-dependent splitting, which persists at…
The thermal stability of most electronic and photo-electronic devices strongly depends on the relationship between Schottky Barrier Height (SBH) and temperature. In this paper, the possible of thermionic current depicted via correct and…
Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be reproduced…
In this paper, we develop an approximate theory of the temperature coefficient of resistivity (TCR) and conductivity based upon the recently proposed Microscopic Response Method. By introducing suitable approximations for the lattice…
The knowledge of capacitance in semiconductor micro-strip detectors is important for a correct design, simulation and understanding of the detectors. Analytical approaches can efficiently complement numerical methods providing quick results…
This paper reports the experimental, analytical, and numerical study of resistive-nanoindentation tests performed on gold samples (bulk and thin film). First, the relevant contributions to electrical contact resistance are discussed and…
A self-consistent method for calculating electron transport through a molecular device is proposed. It is based on density functional theory electronic structure calculations under periodic boundary conditions and implemented in the…
In this paper, we review and substantially develop the recently proposed "Microscopic Response Method", which has been devised to compute transport coefficients and especially associated temperature dependence in complex materials. The…
Semiclassical methods are extremely valuable in the study of transport and thermodynamical properties of ballistic microstructures. By expressing the conductance in terms of classical trajectories, we demonstrate that quantum interference…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…
Deepening the understanding of interface-type Resistive Switching (RS) in metal/oxide heterojunctions is a key step for the development of high-performance memristors and Schottky rectifiers. In this study, we address the role of…
Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel…
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…
We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors", in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics…
We study a molecular lattice Hamiltonian in which polaronic charge carriers interact with non linear potentials provided by local atomic fluctuations between two equilibrium sites. The path integral formalism is applied to select the class…
Perturbative considerations account for the properties of conventional metals, including the range of temperatures where the transport scattering rate is $1/\tau_\text{tr} = 2\pi \lambda T$, where $\lambda$ is a dimensionless strength of…
Insertion of a resistive contact between a ferromagnetic metal and a semiconductor microstructure is of critical importance for achieving efficient spin injection into a semiconductor. However, the equations of the diffusion theory are…
In this work we construct a stochastic contact variational integrator and its discrete version via stochastic Herglotz variational principle for stochastic contact Hamiltonian systems. A general structure-preserving stochastic contact…