Related papers: On the calculation of Schottky contact resistivity
Accurate prediction of Schottky barrier heights (SBHs) at metal-semiconductor (M-SC) interfaces is essential for understanding and optimizing charge injection in electronic and optoelectronic devices. However, first-principles calculations…
The resistivity as function of temperature of high temperature superconductors is very unusual and despite its importance lacks an unified theoretical explanation. It is linear with the temperature for overdoped compounds but it falls more…
The interplay between electronic interactions and disorder is neglected in the conventional Boltzmann theory of transport, yet can play an essential role in determining the resistivity of unconventional metals. When quasiparticles are…
For carbon nanotube transistors, as for graphene, the electrical contacts are a key factor limiting device performance. We calculate the device characteristics as a function of nanotube diameter and metal workfunction. Although the on-state…
Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain…
Contact resistance of semiconducting transition metal dichalcogenides has been shown to decrease in lateral heterojunctions formed with their metallic phases but its origins remain elusive. Here we combine first principles and quantum…
Thermal contact has always been a hot issue in many engineering fields and thermal contact resistance (TCR) is one of the important indicators weighing the heat transfer efficiency among the interfaces. In this paper, the contact heat…
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…
In this work we devise a stochastic version of contact Hamiltonian systems, and show that the phase flows of these systems preserve contact structures. Moreover, we provide a sufficient condition under which these stochastic contact…
We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a…
We report on the fabrication and electronic transport characterisation of Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK the QPC conductance as a function of gate voltage shows a…
The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate…
Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one-dimensional structures such as nanotubes and nanowires, side contact with the metal only leads to weak band re-alignement, in contrast to bulk…
Ab-initio simulations of quantum transport commonly focus on a central region which is considered to be connected to infinite, periodic leads through which the current flows. The electronic structure of these distant leads is normally…
The accuracy of contact resistance values of two-dimensional field-effect transistors extracted with the \textit{Y}-function considering the impact of the intrinsic mobility degradation is evaluated here. The difference between…
The investigation of the electronic properties of semiconductors is inherently challenging due to the ensemble averaging of fundamentals to transport measurements (i.e., resistivity, Hall, and Seebeck coefficient measurements). Here, we…
An analytical model is presented that can account for both electrical and hot and cold thermal contact resistances when calculating the efficiency of a thermoelectric generator. The model is compared to a numerical model of a thermoelectric…
Various methods for calculating the capacitance of unloaded rolling elements are compared to improve the electric characterization of rolling element bearings. Semi-analytical approximations and finite element simulations are applied and a…
In this paper we give a survey of methods used to calculate values of resistance distance (also known as effective resistance) in graphs. Resistance distance has played a prominent role not only in circuit theory and chemistry, but also in…
Stochastic contraction analysis is a recently developed tool for studying the global stability properties of nonlinear stochastic systems, based on a differential analysis of convergence in an appropriate metric. To date, stochastic…