Related papers: Spin-dependent processes at the crystalline Si-SiO…
We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum…
Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface…
The upper critical magnetic field H_{c2} in thin-film FSF trilayer spin-valve cores is studied experimentally and theoretically in geometries perpendicular and parallel to the heterostructure surface. The series of samples with variable…
Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…
We report temperature and density dependences of the spin susceptibility of strongly interacting electrons in Si inversion layers. We measured (i) the itinerant electron susceptibility $\chi^*$ from the Shubnikov-de Haas oscillations in…
CePtSi2 was reported to exhibit an antiferromagnetic order below T*=1.8 K at ambient pressure, a valence state change at ~1.2 GPa, and superconductivity in the range between 1.4 and 2.1 GPa with the maximum transition temperature of 0.14 K…
The description of the proximity effect in superconducting/ferromagnetic heterostructures requires to use spin-dependent boundary conditions. Such boundary conditions must take into account the spin dependence of the phase shifts acquired…
Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the…
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…
The 2D superconductor-insulator transition in disordered ultrathin amorphous bismuth films has been tuned both by electrostatic electron doping using the electric field effect and by the application of parallel magnetic fields.…
By combining interface-sensitive non-linear magneto-optical experiments with femtosecond time resolution and ab-initio time-dependent density functional theory, we show that optically excited spin dynamics at Co/Cu(001) interfaces proceeds…
We demonstrate that a new tool, a model independent numerical Eliashberg inversion of the optical self-energy, based on maximum entropy considerations can be used to extract the magnetic excitation spectra of high-transition-temperature…
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the…
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information…
We have measured the spin susceptibility of the underdoped high temperature superconductor, YBa2Cu4O8 by Gd^{3+} electron spin resonance in single crystals and aligned powders at several magnetic fields between 3 and 15.4 T. At low…
The magnetic field driven superconductor/insulator transition is studied in a large variety of $La_{2-x}Sr_xCuO_4$ thin films of various Sr dopings. Temperature dependence of the resistivity down to 4.2 or 1.5 K under high pulsed magnetic…
Positive magnetoresistance (PMR) of a silicon MOSFET in parallel magnetic fields B has been measured at high electron densities n >> n_c where n_c is the critical density of the metal-insulator transition (MIT). It turns out that the…
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where…
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that…
We study the physical properties of a half-metallic ferromagnet$\mid$superconductor (HM$\mid$S) bilayer, allowing for an arbitrary bulk pairing symmetry of the superconductor and spin-dependent processes at the interface. In particular, we…