Related papers: GaMnAs-based hybrid multiferroic memory device
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
Manipulation of directional magnon propagation, known as magnon spin current, is essential for developing magnonic memory and logic devices featuring nonvolatile functionalities and ultralow power consumption. Magnon spin current can…
We propose a two terminal nanomagnetic memory element based on magnetization reversal of a perpendicularly magnetized nanomagnet employing a unipolar voltage pulse that modifies the perpendicular anisotropy of the system. Our work…
We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronics device with potential high frequency operation. By using state-of-the-art density…
Magnons in antiferromagnets can support both right-handed and left-handed chiralities, which shed a light on the chirality-based spintronics. Here we demonstrate the switching and reading of magnon chirality in an artificial…
Recent advances in tuning the correlated behavior of graphene and transition-metal dichalcogenides (TMDs) have opened a new frontier in the study of many-body physics in two dimensions and promise exciting possibilities for new quantum…
Spintronics is a new paradigm for integrated digital electronics. Recently established as a niche for nonvolatile magnetic random access memory (MRAM), it offers new functionality while demonstrating low power and high speed performance.…
We describe and analyze a cellular nonlinear network based on magnetic nanostructures for image processing. The network consists of magneto-electric cells integrated onto a common ferromagnetic film - spin wave bus. The magneto-electric…
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable…
Antiferromagnets have attracted significant attention in the field of magnonics, as promising candidates for ultralow-energy carriers for information transfer for future computing. The role of crystalline orientation distribution on magnon…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of…
This paper reviews the recent developments on building nanoelectronics for our future information processing paradigm using multiferroic composites. With appropriate choice of materials, when a tiny voltage of few tens of millivolts is…
Micron scale imaging of magnetic fields is an important tool for understanding the evolution of magnetism through phase transitions and as a result of interactions inside of heterostructures. However, most imaging platforms, like the…
Antiferromagnets have been generating intense interest in the spintronics community, owing to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While the control of antiferromagnetic (AFM) orders has…
The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…
Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we…
An attractive feature of magnetic adatoms and molecules for nanoscale applications is their superparamagnetism, the preferred alignment of their spin along an easy axis preventing undesired spin reversal. The underlying magnetic anisotropy…