Related papers: GaMnAs-based hybrid multiferroic memory device
In this work, we consider the possibility of using synthetic multiferroics comprising piezoelectric and magnetostrictive materials as an interconnect for nano magnetic logic circuits. The proposed interconnect resembles a parallel plate…
In alignment with the increasing demand for larger storage capacity and longer data retention, electrical control of magnetic anisotropy has been a research focus in the realm of spintronics. Typically, magnetic anisotropy is determined by…
Nanoelectromangetomechanical systems (NEMMS) open up a new path for the development of high speed autonomous nanoresonators and signal generators that could be used as actuators, for information processing, as elements of quantum computers…
In this work, we utilize voltage controlled magnetic anisotropy (VCMA) to manipulate magnetic skyrmions that are fixed in space. Memory devices based on this strategy can potentially be of smaller footprint and better energy efficiency than…
The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…
The current efforts to fabricate non-volatile magnetic recording media with a high areal density is deteriorated by the increasing temporal instability of the stored information. If the stored energy per magnetic particle competes with the…
Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model…
Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO3 antiferroelectric substrate and Ni81Fe19 magnetic free layer. Information is stored as magnetisation direction in the free layer of a…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…
We propose a design for the magnetic memory cell which allows an efficient storage, recording, and readout of information on the basis of thin film ferromagnetic nanorings. The information bit is represented by the polarity of a stable…
We investigate different approaches towards a nonvolatile switching of the remanent magnetization in single-crystalline ferromagnets at room temperature via elastic strain using ferromagnetic thin film/piezoelectric actuator hybrids. The…
A spin valve is a prototype of spin-based electronic devices found on ferromagnets, in which an antiferromagnet plays a supporting role. Recent findings in antiferromagnetic spintronics show that an antiferromagnetic order in single-phase…
A major challenge in spin-based electronics is reducing power consumption for magnetization switching of ferromagnets, which is being implemented by injecting a large spin-polarized current. The alternative approach is to control the…
Antiferromagnetic materials feature intrinsic ultrafast spin dynamics, making them ideal candidates for future magnonic devices operating at THz frequencies. A major focus of current research is the investigation of optical methods for the…
Solving complex tasks in a modern information-driven society requires novel materials and concepts for energy-efficient hardware. Antiferromagnets offer a promising platform for seeking such approaches due to their exceptional features: low…
Composite multiferroics consisting of a ferroelectric material interfaced with a ferromagnetic material can function above room temperature and exhibit improved magnetoelectric (ME) coupling compared to single-phase multiferroic materials,…
Antiferromagnetic materials are promising platforms for the development of ultra-fast spintronics and magnonics due to their robust magnetism, high-frequency relativistic dynamics, low-loss transport, and the ability to support topological…