Related papers: Spin Dephasing in Drift-Dominated Semiconductor Sp…
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…
Recent progress in physics on spin dependent transport in magnetic nanostructures is reviewed. Special attention is paid on the spin accumulation and spin current caused by spin injection into non-magnetic metals and semiconductors and…
We review our theoretical investigation on the spin relaxation/dephasing in spin precession and spin diffusion/transport in semiconductor nanostructures based on the kinetic spin Bloch equation approach.
We show that the electric field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from…
Spin transport of magnonic excitations in uniaxial insulating antiferromagnets (AFs) is investigated. In linear response to spin biasing and a temperature gradient, the spin transport properties of normal-metal--insulating…
We propose a nonlinear sigma model for the description of quantum transport in a mesoscopic metallic conductor with magnetic impurities frozen in a spin glass phase. It accounts for the presence of both the corresponding scalar and magnetic…
Angular momentum transport in magnetic multilayered structures plays a central role in spintronic physics and devices. The angular momentum currents or spin currents are carried by either quasi-particles such as electrons and magnons, or by…
Charge and spin transport in spintronics devices can be described by a spin diffusion equation suitable for modelling scales much larger than the scattering and atomic scales. This work concerns the coarse graining procedure used to compute…
Layered materials are promising candidates for spintronic applications due to their unique electronic structures and spin transport properties. However, the strong anisotropic conductivity inherent in these materials complicates the…
A slanting magnetic field is usually used to realize a slight hybridization between the spin and orbital degrees of freedom in a semiconductor quantum dot, such that the spin is manipulable by an external oscillating electric field. Here we…
We find that the electronic spin rotation induced by drift transport around a closed path in a wide variety of nonmagnetic semiconductors at zero magnetic field depends solely on the physical path taken. Physical paths that produce any…
The fundamental aspects of spin-dependent transport processes and their interplay with temperature gradients, as given by the spin Seebeck coefficient, are still largely unexplored and a multitude of contributing factors must be considered.…
We show that the propagation of spin polarized carriers may be dramatically affected by {\em inhomogeneous} electric fields. Surprisingly, the spin diffusion length is found to strongly depend on the sign and magnitude of electric field…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
We investigate electron transport and phase-breaking processes in thin titanium nitride (TiN) films of epitaxial quality. Previous studies show that a minute surface magnetic disorder significantly reduces the critical temperature…
We calculate the dephasing rate of the electrons in the presence of interactions and elastic spin disorder scattering. In the frame of a self-consistent diagrammatic treatment, we obtain saturation of the dephasing rate in the limit of zero…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
In the spin energy excitation mode of normal metals and superconductors, spin up and down electrons (or quasiparticles) carry different heat currents. This mode occurs only when spin up and down energy distribution functions are…
Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very…
Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in…