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Our paper presents a non-destructive thermal transient measurement method that is able to reveal differences even in the micron size range of MEMS structures. Devices of the same design can have differences in their sacrificial layers as…
This paper analyzes a transient method for the characterization of low-resistance thermal interfaces of microelectronic packages. The transient method can yield additional information about the package not available with traditional static…
Semiconductor integrated circuits operated at cryogenic temperature will play an essential role in quantum computing architectures. These can offer equivalent or superior performance to their room-temperature counterparts while enabling a…
We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room…
Thermal FEM (Finite Element Method) simulations can be used to predict the thermal behavior of power semiconductors in application. Most power semiconductors are made of silicon. Silicon thermal material properties are significantly…
In this paper the methodology and the results of a quasi real-time thermal characterization tool and method for the temperature mapping of circuits and boards based on sensing the infrared radiation will be introduced. With the proposed…
In this paper new characterization equipment for thermal interface materials is presented. Thermal management of electronic products relies on the effec-tive dissipation of heat. This can be achieved by the optimization of the system design…
The next generation of ultra-low-noise cryogenic detectors for space science applications require continued exploration of materials characteristics at low temperatures. The low noise and good energy sensitivity of current Transition Edge…
Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its…
Defect detection plays a vital role in the manufacturing process of integrated circuits (ICs). Die attachment and wire bonding are two steps of the manufacturing process that determine the power and signal transmission quality and…
Surface temperature measurements were performed with a Scanning Thermal Microscope mounted with a thermoresistive wire probe of micrometrSurface temperature measurements were performed with a Scanning Thermal Microscope mounted with a…
Quantifying the temperature of microdevices is critical for probing nanoscale energy transport.Such quantification is often accomplished by integrating resistance thermometers into microdevices. However, such thermometers frequently become…
Temperature rise of qubits due to heating is a critical issue in large-scale quantum computers based on quantum-dot (QD) arrays. This leads to shorter coherence times, induced readout errors, and increased charge noise. Here, we propose a…
This paper presents and evaluates a novel method for generating power losses on transistors avoiding high currents. These could heat up the circuit tracks, affecting the accurate thermal modeling of the system. The proposed procedure is…
Besides their electrical properties the optical parameters of LEDs also depend on junction temperature. For this reason thermal characterization and thermal management play important role in case of power LEDs, necessitating both physical…
Self-heating in surrounding gate transistors can degrade its on-current performance and reduce lifetime. If a transistor heats/cools with time-constants less than the inverse of the operating frequency, a predictable, frequency-independent…
The paper describes a method for measuring the thermal diffusivity of materials having a high thermal conductivity. The apparatus is rather simple and low-cost, being therefore suitable in a laboratory for undergraduate students of…
The heart of every switched mode converter consists of several switching semiconductor elements. Due to their non-ideal behaviour there are ON state and switching losses heating up the silicon chip. That heat must effectively be transferred…
This work builds on the previous introduction [1] of a coupled experimental-computational system devised to fully characterize the thermal behavior of complex 3D submicron electronic devices. The new system replaces the laser-based surface…
The observation of coherent quantum transport phenomena in metals and semiconductors is limited by the eventual loss of phase coherence of the conducting electrons. We use the weak localization effect to measure the low-temperature…