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Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…
Modern CPUs with increasing core frequency and power are rapidly reaching a point where the CPU frequency and performance are limited by the amount of heat that can be extracted by the cooling technology. In mobile environment, this issue…
As technology scales down, the static power is expected to become a significant fraction of the total power. The exponential dependence of static power with the operating temperature makes the thermal profile estimation of high-performance…
In this paper the methodology and the results of a contactless thermal characterization of a high temperature test chamber will be introduced. The test chamber is used for fatigue testing of different MEMS devices where the homogenous…
We report local time-resolved thermometry in a silicon nanowire quantum dot device designed to host a linear array of spin qubits. Using two alternative measurement schemes based on rf reflectometry, we are able to probe either local…
It is up to now a challenge to control the conduction of heat. Here we develop a method to distort the temperature distribution signature of an object at will. As a result, the object accurately exhibits the same temperature distribution…
Measuring thermal properties of materials is not only of fundamental importance in understanding the transport processes of energy carriers (electrons and phonons) but also of practical interest in developing novel materials with desired…
Hardware assurance of electronics is a challenging task and is of great interest to the government and the electronics industry. Physical inspection-based methods such as reverse engineering (RE) and Trojan scanning (TS) play an important…
The thermal response function given to a unit-step dissipation accurately characterizes the thermal system. Instead of the thermal response function the so-called structure function describing three-dimensional as the equivalent model of…
In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…
Thermal conductivity and interfacial thermal conductance play crucial roles in the design of engineering systems where temperature and thermal stress are of concerns. To date, a variety of measurement techniques are available for both bulk…
In this paper the feasibility study of an IR sensor card is presented. The methodology and the results of a quasi real-time thermal characterization tool and method for the temperature mapping of circuits and boards based on sensing the…
The method consists in the monitoring of the temperature variation of a superconductor tape subjected to a trapezoidal current pulse. Simulations of the experiment were performed using the lumped capacitance model and also the finite…
In this laboratory-based study, a plate was designed, manufactured and then characterised thermally and dimensionally using a thermal imager. This plate comprised a range of known scratch, dent, thinning and pitting artefacts as mimics of…
Increasing power densities in integrated circuits has led to an increased prevalence of thermal hotspots in integrated circuits. Tracking these thermal hotspots is imperative to prevent circuit failures. In 3D integrated circuits,…
Using the strong temperature dependent resistance of a normal metal wire in proximity to a superconductor, we have been able to measure the local temperature of electrons heated by flowing a dc current in a metallic wire to within a few…
Implementing topological insulators as elementary units in quantum technologies requires a comprehensive understanding of the dephasing mechanisms governing the surface carriers in these materials, which impose a practical limit to the…
Ductile Regime Machining of semiconductors (DRM) offers higher quality of the resulting surfaces. To optimize this process, it is required to understand the thermal kinetics of silicon metallization under pressure. Such understanding is not…
This paper demonstrates the use of voltage noise thermometry, with a cross-correlation technique, as a dissipation-free method of thermometry inside a CMOS integrated circuit (IC). We show that this technique exhibits broad agreement with…
We discuss a class of mechanical models of thermometers and their minimal requirements to determine the temperature for systems out of the common scope of thermometry. In particular we consider: 1) anharmonic chains with long time of…