Related papers: Voltage control of magnetocrystalline anisotropy i…
We present a study of the control of electric field induced strain on the magnetic and electrical transport properties in a magneto-elastically coupled artificial multiferroic Fe3O4/BaTiO3 heterostructure. In this Fe3O4/BaTiO3…
A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by…
The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles…
Perpendicular magnetic anisotropy of the new ferromagnetic semiconductor (Ba,K)(Zn,Mn)$_{2}$As$_{2}$ is studied by angle-dependent x-ray magnetic circular dichroism measurements. The large magnetic anisotropy with the anisotropy field of…
A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of the magnetic anisotropy of ferromagnetic materials is of…
We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be modulated by picosecond acoustic pulses. In this approach a picosecond strain pulse injected into the structure induces a tilt of the magnetization vector M,…
Electric-field control of magnetism via inverse magnetostrictive effect is an efficient path towards improving energy-efficient storage and sensing devices based on giant magnetoresistance effect. In this letter, we report on lateral…
Electrical control of magnetism of a ferromagnetic semiconductor offers exciting prospects for future spintronic devices for processing and storing information. Here, we report observation of electrically modulated magnetic phase transition…
Applicability of dilute magnetic semiconductors (DMS) in electronic devices relies upon the understanding and control of their magnetic anisotropy. This paper explores one of the ways in engineering magnetic anisotropy in epitaxial layers…
We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe81Ga19 film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the…
Electrical manipulation of lattice, charge, and spin has been realized respectively by the piezoelectric effect, field-effect transistor, and electric field control of ferromagnetism, bringing about dramatic promotions both in fundamental…
Magnetic straintronics, the strain-mediated control of magnetic anisotropy, has emerged as a key direction for next-generation energy-efficient technologies. In multiferroic heterostructures, magnetoelectric coupling is typically achieved…
Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultra-low power technologies. Among few suggested approaches, magneto-ionic control of magnetism has…
We demonstrate sensitivity of the Mn 3d valence states to strain in the ferromagnetic semiconductors (Ga,Mn)As and (Al,Ga,Mn)As, using x-ray magnetic circular dichroism (XMCD). The spectral shape of the Mn $L_{2,3}$ XMCD is dependent on the…
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device…
Voltage controlled magnetic anisotropy (VCMA) is an efficient way to manipulate the magnetization states in nanomagnets, promising for low-power spintronic applications. The underlying physical mechanism for VCMA is known to involve a…
The exploration of electric field controlled magnetism has come under scrutiny for its intriguing magnetoelectric phenomenon as well as technological advances in spintronics. Herein, the tremendous effect of an epitaxial strain on…
The prospect of all electrically controlled writing of ferromagnetic bits is highly desirable for developing scalable and energy-efficient spintronics devices. In the present work, we perform micromagnetic simulations to investigate the…
Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy in the layer. The…
We report on a promising approach to the artificial modification of ferromagnetic properties in (Ga,Mn)As using a Ga$^+$ focused ion beam (FIB) technique. The ferromagnetic properties of (Ga,Mn)As such as magnetic anisotropy and Curie…