Related papers: A graphene-based electrochemical switch
Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive…
A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…
We found that the current-voltage characteristics of the single-layer graphene field-effect transistors exhibit an intriguing feature - an abrupt change of the current near zero gate bias at elevated temperatures T > 500 K. The strength of…
Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…
Graphene-assisted resonant transmission and enhanced Goos-H\"{a}nchen shift are investigated in a two-prism frustrated-total-internal-reflection configuration. Due to the excitation of surface plasmons induced by graphene in low terahertz…
We demonstrate top-gated field effect transistor made of reduced graphene oxide (RGO) monolayer (graphene) by dielectrophoresis. Raman spectrum of RGO flakes of typical size of 5{\mu}m x 5{\mu}m show a single 2D band at 2687 cm-1,…
The effect of electron-electron interaction on the low-temperature conductivity of graphene is investigated experimentally. Unlike in other two-dimensional systems, the electron-electron interaction correction in graphene is sensitive to…
An interesting interplay between two different modifiers and the surface of titanium dioxide leads to a significant change in photoelectrochemical properties of the designed hybrid materials. The semiconductor is photosensitized by one of…
Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole…
Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel…
We study chemical reaction between a single hydrogen atom and a graphene, which is the elemental reaction between hydrogen and graphitic carbon materials. In the present work, classical molecular dynamics simulation is used with modified…
In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require…
In the last decade, advancements in attosecond spectroscopy have allowed us to study electron motion dynamics in condensed matter. The access to these electron dynamics and, consequently, its control by an ultrafast light field paves the…
We argue that the unscreened Coulomb interaction in graphene provides a positive, universal, and logarithmic correction to scaling of zero-temperature conductivity with frequency. The combined effect of the disorder due to wrinkling of the…
The entire graphene field-effect-transistor (FET) devices first fabricated on SiO2/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the…
The use of electric fields for signalling and control in liquids is widespread, spanning bioelectric activity in cells to electrical manipulation of microstructures in lab-on-a-chip devices. However, an appropriate tool to resolve the…
An interlayer distance modulation in twisted bilayer graphene is reported. This is achieved by an in-situ annealing technique. The transformation of systematic vacuum and hydrogen annealing effects in twisted bilayer CVD graphene on SiO2…
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high…
Doped graphene sheets are pseudochiral two-dimensional Fermi liquids with abnormal electron-electron interaction physics. We address graphene's Fermi liquid properties quantitatively using a microscopic random-phase-approximation theory and…
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto…