Related papers: Large voltage from spin pumping in magnetic tunnel…
Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$…
The spin-torque in magnetic tunnel junctions possesses two components that both depend on the applied voltage. Here, we develop a new method for the accurate extraction of this bias-dependence from experiments over large voltage ranges. We…
We show that elastic currents that take into account variations of the tunnel transmitivity with voltage and a large ratio of majority to minority spin densities of states of the $s$ band, can account for the low voltage current anomalies…
Subjecting a magnetic tunnel junction (MTJ) to a spin current and/or electric voltage induces magnetic precession, which can reciprocally pump current through the circuit. This results in an ac impedance, which is sensitive to the magnetic…
We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements…
The temperature dependence of a vortex-based nano-oscillator induced by spin transfer torque (STVO) in magnetic tunnel junctions (MTJ) is considered. We obtain emitted signals with large output power and good signal coherence. Due to the…
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…
Dynamical antiferromagnets pump spins efficiently into adjacent conductors as ferromagnets. The high antiferromagnetic resonance frequencies represent a challenge for experimental detection, but magnetic fields can reduce these resonance…
In magnetic nanostructures one usually uses a magnetic field to commute between two resistance (R) states. A less common but technologically more interesting alternative to achieve R-switching is to use an electrical current, preferably of…
We present a simple model of composite particle tunnelling through a rectangular potential barrier in presence of magnetic field. The exact numerical solution of the problem is provided and the applicability to real physical situations is…
We measure electron tunneling via discrete energy levels in ferromagnetic cobalt particles less than 4 nm in diameter, using non-magnetic electrodes. Due to magnetic anisotropy, the energy of each tunneling resonance shifts as an applied…
We measured the magnetic field dependence of the critical current of high quality Nb-based planar Josephson tunnel junctions in the presence of a controllable non-uniform field distribution. We found skewed and slowly changing magnetic…
Thermal-magnetic noise at ferromagnetic resonance (T-FMR) can be used to measure magnetic perpendicular anisotropy of nanoscale magnetic tunnel junctions (MTJs). For this purpose, T-FMR measurements were conducted with an external magnetic…
Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the…
We have made an experimental study of the tunneling density of states (DOS) in strong ferromagnetic thin films (CoFe) in proximity with a thick superconducting film (Nb) as a function of $d_F$, the ferromagnetic thickness. Remarkably, we…
We report on systematic ab-initio investigations of Co and Cr interlayers embedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on the changes of the electronic structure and the transport properties with interlayer thickness.…
We study theoretically the dc Josephson tunnel current for a junction of two proximity S/F bilayers of a massive superconductor (S) / a thin ferromagnet (F) separated by an insulating (I) barrier. The dependence of the critical current on…
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…
We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat…
Spin dependent single electron tunneling in ferromagnetic double junctions is analysed theoretically in the limit of sequential tunneling. The influence of discrete energy spectrum of the central electrode (island)on the spin accumulation,…