Related papers: 3-D Self-Assembled Soi Mems: An Example of Multiph…
This chapter describes the basic design, simulation, and fabrication for fully Si integrated, waveguide coupled, optomechanical force and displacement sensors. The approach of full Si integration of all stationary nanophotonic components…
Abstract: Solid state sensors having timing capabilities are becoming an absolute need in particle tracking techniques of future experiments at colliders. In this sense, silicon sensors having 3D structure are becoming an interesting…
The majority of microelectromechanical system (MEMS) devices must be combined with integrated circuits (ICs) for operation in larger electronic systems. While MEMS transducers sense or control physical, optical or chemical quantities, ICs…
In this paper vibration combined high temperature cycle tests for packaged capacitive SOI-MEMS accelerometers are presented. The aim of these tests is to provide useful Design for Reliability information for MEMS designers. A high…
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility…
A simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important for advanced CMOS technology and thus are evaluated as…
In this paper we report on a novel simulation tool designed for the 3D coupled electro-thermal simulation of Smart Power Mosfets, that is a tool capable of taking into account not only the electrical (and thermal) behaviour of the power…
In this article we propose and numerically implement a mathematical model for the simulation of three-dimensional semiconductor devices characterized by an heterogeneous material structure. The model consists of a system of nonlinearly…
A new transmission-type electron multiplier was fabricated from silicon-on-insulator (SOI) material by integrating an array of one dimensional (1D) silicon nanopillars onto a two dimensional (2D) silicon membrane. Primary electrons are…
Functional aspects as well as the influence of integration technology on the system behavior have to be considered in the 3D integration design process of micro systems. Therefore, information from different physical domains has to be…
The smart integrated systems of tomorrow would demand a combination of micromechanical components and traditional electronics. On-chip solutions will be the ultimate goal. One way of making such systems is to implement the mechanical parts…
The low thermal conductivity of silicon nanostructures, with respect to bulk silicon, opens excellent possibilities for thermoelectric applications because it will enable the use of silicon for the high efficient direct conversion of wasted…
Heterogeneous system-on-chips (SoCs) have become the standard embedded computing platforms due to their potential to deliver superior performance and energy efficiency compared to homogeneous architectures. They can be particularly suited…
Single-electron transistors (SETs) have been extensively used as charge sensors in many areas such as quantum computations. In general, the signals of SETs are smaller than those of complementary metal-oxide semiconductor (CMOS) devices,…
3D integration technologies are seeing widespread adoption in the semiconductor industry to offset the limitations and slowdown of two-dimensional scaling. High-density 3D integration techniques such as face-to-face wafer bonding with…
The field of microelectromechanical Systems (MEMS) for photonic integrated circuits (PICs) is reviewed. This field leverages mechanics at the nanometer to micrometer scale to improve existing components and introduce novel functionalities…
Erbium ($\text{Er}^{3+}$) emitters are relevant for optical applications due to their narrow emission line directly in the telecom C-band due to the ${}^\text{4}\text{I}_{\text{13/2}}$ $\rightarrow$ ${}^\text{4}\text{I}_{\text{15/2}}$…
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound…
Harnessing modern parallel computing resources to achieve complex multi-physics simulations is a daunting task. The Multiphysics Object Oriented Simulation Environment (MOOSE) aims to enable such development by providing simplified…
We present electrothermal microelectromechanical (MEMS) actuators as a practical platform for straining 2D materials. The advantages of the electrothermal actuator is its high output force and displacement for low input voltage, but its…