Related papers: Suppression of rectification at metal-Mott-insulat…
The ground state properties of a paramagnetic Mott insulator are investigated in the presence of an external electrical field using the inhomogeneous Gutzwiller approximation for a single band Hubbard model in a slab geometry. The metal…
Motivated by the recent experimental evidence of commensurate surface CDW in Pb/Ge(111) and Sn/Ge(111) $\sqrt{3}$-adlayer structures, as well as by the insulating states found on K/Si(111):B and SiC(0001), we have investigated the role of…
We perform precision measurements on a Mott-insulator quantum state of ultracold atoms with tunable interactions. We probe the dependence of the superfluid-to-Mott-insulator transition on the interaction strength and explore the limits of…
We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip to apply different load forces to monolayer and few-layer…
Motivated by the direct observation of electronic phase separation in first-order Mott transitions, we model the interface between the thermodynamically coexisting metal and Mott insulator. We show how to model the required slab geometry…
Dynamical mean-field theory is employed to calculate the electronic charge reconstruction of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers sandwiching barrier planes of a strongly correlated material…
We have investigated the effects of a smooth transition layer at the contact discontinuity on the growth of the Richtmyer-Meshkov instability (RMI) by hydrodynamic numerical simulations and derived an empirical condition for the suppression…
Quantum phases of matter are routinely identified by coherence features, with interference patterns being one of the most directly observable quantities. In lattices, the superfluid-to-Mott-insulator (SF-MI) transition is commonly viewed as…
Self-consistent, mean-field description of charge injection into a dielectric medium is modified to account for discreteness of charge carriers. The improved scheme includes both the Schottky barrier lowering due to the individual image…
With the aid of both a semi-analytical and a numerically exact method we investigate the charge dynamics in the vicinity of half-filling in the one- and two-dimensional $t$-$J$ model derived from a Fermi-Hubbard model in the limit of large…
In condensed matter physics, various mechanisms give rise to distinct insulating phases. The competition and interplay between these phases remain elusive, even for the seemingly most distinguishable band and Mott insulators. In multilayer…
A half-filled-band Hubbard model on an anisotropic triangular lattice (t in two bond directions and t' in the other) is studied using an optimization variational Monte Carlo method, to consider the Mott transition and superconductivity…
Accurate prediction of Schottky barrier heights (SBHs) at metal-semiconductor (M-SC) interfaces is essential for understanding and optimizing charge injection in electronic and optoelectronic devices. However, first-principles calculations…
We investigate in detail the $\nu=+1$ displacement-field-tuned interacting phase diagram of $L=3,4,5,6,7$ layer rhombohedral graphene aligned to hBN (R$L$G/hBN). Our calculations account for the 3D nature of the Coulomb interaction, the…
We show that the interplay of a high density two-dimensional electron gas and localized electrons in a neighboring Mott insulator leads to kinetic magnetism unique to the Mott/band insulator interface. Our study is based upon a bilayer…
We study a one-dimensional chain of identical atoms with two electronic orbitals and two electrons per atom, subject to an external oscillating pressure that periodically modulates the lattice spacing. This leads to time-dependent intra-…
The possibility of "orbitally selective Mott transitions" within a multiband Hubbard model, in which one orbital with large on-site electron-electron repulsion $U_1$ is insulating and another orbital, to which it is hybridized, with small…
The Schottky barrier heights (SBHs) of defect-free interfaces of ZnO, CdO, MgO and SrO with various metals and different terminations are investigated by density functional supercell calculations. The oxide bands are corrected for their…
We reanalyze some of the critical transport experiments and provide a coherent understanding of the current generation of topological insulators (TIs). Currently TI transport studies abound with widely varying claims of the surface and bulk…
Schottky barrier field-effect transistors (SBFETs) based on few and mono layer phosphorene are simulated by the non-equilibrium Green's function formalism. It is shown that scaling down the gate oxide thickness results in pronounced…