Related papers: A New Embedded Measurement Structure for eDRAM Cap…

This paper describes several new improvements of modular arithmetic and how to exploit them in order to gain more efficient implementations of commonly used algorithms, especially in cryptographic applications. We further present a new…

A novel embedded atom method (EAM) potential for the Xi-phases of Al-Pd-Mn has been determined with the force-matching method. Different combinations of analytic functions were tested for the pair and transfer part. The best results are…

In recommendation systems, practitioners observed that increase in the number of embedding tables and their sizes often leads to significant improvement in model performances. Given this and the business importance of these models to major…

This paper addresses a novel five-transistor (5T) CMOS SRAM design with high performance and reliability in 65nm CMOS, and illustrates how it reduces the dynamic power consumption in comparison with the conventional and low-power 6T SRAM…

Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…

The rapid development of multi-core system and increase of data-intensive application in recent years call for larger main memory. Traditional DRAM memory can increase its capacity by reducing the feature size of storage cell. Now further…

Increasing system-on-chip (SoC) heterogeneity, deep hardware/software integration, and the proliferation of third-party intellectual property (IP) have brought security validation to the forefront of semiconductor design. While simulation…

Variation has been shown to exist across the cells within a modern DRAM chip. We empirically demonstrate a new form of variation that exists within a real DRAM chip, induced by the design and placement of different components in the DRAM…

Electrochemical random-access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in-memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This…

A 28nm dense 6T-SRAM Digital(D)/Analog(A) Hybrid compute-in-memory (CIM) macro supporting complex num-ber MAC operation is presented. By introducing a 2D-weighted Capacitor Array, a hybrid configuration is adopted where digital CIM is…

The Last Level Cache (LLC) is the processor's critical bridge between on-chip and off-chip memory levels - optimized for high density, high bandwidth, and low operation energy. To date, high-density (HD) SRAM has been the conventional…

We are proposing to test experimentally the new idea of Enhanced Optical Cooling (EOC) in an electron storage ring. This experiment will confirm new fundamental processes in beam physics and will demonstrate new unique possibilities with…

With the advent of modern embedded systems, logging as a process is becoming more and more prevalent for diagnostic and analytic services. Traditionally, storage and managing of the logged data are generally kept as a part of one entity…

Compute in-memory (CIM) is a promising technique that minimizes data transport, the primary performance bottleneck and energy cost of most data intensive applications. This has found wide-spread adoption in accelerating neural networks for…

An SRAM Physical Unclonable Function (PUF) can distinguish SRAM modules by analyzing the inherent randomness of their start-up behavior. However, the effectiveness of this technique varies depending on the design and fabrication of the SRAM…

Security and energy-efficiency are critical for computing applications in general and for edge applications in particular. Digital in-Memory Computing (IMC) in SRAM cells have widely been studied to accelerate inference tasks to maximize…

This paper describes a highly integrated, low power chip solution for ECG signal processing in wearable devices. The chip contains an instrumentation amplifier with programmable gain, a band-pass filter, a 12-bit SAR ADC, a novel QRS…

Computing-in-Memory (CiM) architectures aim to reduce costly data transfers by performing arithmetic and logic operations in memory and hence relieve the pressure due to the memory wall. However, determining whether a given workload can…

Deploying Retrieval-Augmented Generation (RAG) on edge devices is in high demand, but is hindered by the latency of massive data movement and computation on traditional architectures. Compute-in-Memory (CiM) architectures address this…

Increasing storage density exacerbates DRAM read disturbance, a circuit-level vulnerability exploited by system-level attacks. Unfortunately, existing defenses are either ineffective or prohibitively expensive. Efficient mitigation is…