Related papers: Transport and percolation in a low-density high-mo…
We have studied the low-temperature electrical transport properties of Pb$_x$(SiO$_2$)$_{1-x}$ ($x$ being the Pb volume fraction) nanogranular films with thicknesses of $\sim$1000 nm and $x$ spanning the dielectric, transitional, and…
We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature,…
Here we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, surface roughness, non-polar optical phonons, and acoustic…
We have used a field-penetration method to measure thermodynamic compressibility of a moderately interacting two-dimensional electron system ($r_{s}$ $\approx$ 0.5-3) in a three terminal GaAs/AlGaAs device, fabricated with an epitaxial…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport…
The power-law increase of the conductivity with temperature in the nominally insulating regime, recently reported for the dilute two-dimensional holes [cond-mat/0603053], is found to systematically vary with the carrier density. Based on…
The "metallic" regime of holes in GaAs/AlGaAs heterostructures corresponds to densities where two splitted heavy hole bands exist at a zero magnetic field. Using Landau fan diagrams and weak field magnetoresistance curves we extract the…
We report the first detailed decay studies of trapped metastable (2S) hydrogen. By two-photon excitation of ultracold H samples, we have produced clouds of at least 5x10^7 magnetically trapped 2S atoms at densities greater than 4x10^10…
We investigate transport in a granular metallic system at large tunneling conductance between the grains, $g_T\gg 1$. We show that at low temperatures, $T\leq g_T\delta $, where $\delta$ is the single mean energy level spacing in a grain,…
The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…
Single crystals of intermetallic Re$_3$Ge$_7$ were grown and characterized by measuring magnetization, electrical resistivity, Hall coefficient, and specific heat. Magnetization measurements show the material is weakly diamagnetic. A phase…
We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have…
We consider transport of dilute two-dimensional electrons, with temperature between Fermi and Debye temperatures. In this regime, electrons form a nondegenerate plasma with mobility limited by potential disorder. Different kinds of…
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results…
On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BT\tau /\hbar $ $>1$. It is shown that the 'metallic' behaviour of…
We investigate transport in a granular metallic system at large tunneling conductance between the grains. We show that at low temperatures, $T\leq g_T\delta $, where $\delta$ is the single mean energy level spacing in a grain, the coherent…
The Hall conductivity and resistivity of strongly localized electrons at low temperatures and at small magnetic fields are obtained. It is found that the results depend on whether the conductivity or the resistivity tensors are averaged to…
We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching…
We report a systematic study of thickness-dependent superconductivity and carrier transport properties in exfoliated layered 2H-NbS2. Hall-effect measurements reveal 2H-NbS2 in its normal state to be a p-type metal with hole mobility of 1-3…