Related papers: Spiral Growth and Step Edge Barriers
We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies…
We develop a theory of nucleation on top of two-dimensional islands bordered by steps with an additional energy barrier $\Delta E_S$ for descending atoms. The theory is based on the concept of the residence time of an adatom on the…
The migration of grain boundaries leads to grain growth in polycrystals and is one mechanism of grain-boundary-mediated plasticity, especially in nanocrystalline metals. This migration is due to the movement of dislocation-like defects,…
The migration of grain boundaries leads to grain growth in polycrystals and is one mechanism of grain-boundary-mediated plasticity, especially in nanocrystalline metals. This migration is due to the movement of dislocation-like defects,…
We consider a simple model for the growth of isolated steps on a vicinal crystal surface. It incorporates diffusion and drift of adatoms on the terrace, and strong step and kink edge barriers. Using a combination of analytic methods and…
We investigate the growth kinetics on vicinal GaAs(001) surfaces by making detailed comparisons between reflection high--energy electron--diffraction specular intensity measured near in--phase diffraction conditions and the surface step…
The nucleation and propagation of disconnections play an essential role during twin growth. Atomistic methods can reveal such small structural features on twin facets and model their motion, yet are limited by the simulation length and time…
Atomistic simulations, based either on an empirical interatomic potential or on ab initio calculations, are used to study the pyramidal glide of a 1/3 <1-210> screw dislocation in hexagonal close-packed zirconium. Generalized stacking fault…
Several aspects of the theory of epitaxial crystal growth from atomic or molecular beams are developed from the perspective of statistical physics. Lectures are devoted to the rate equation theory of two-dimensional nucleation and its…
Mound formation on flat and miscut crystal surfaces exhibits distinct growth behaviors. While mound structures are the predominant feature on flat surfaces, miscut surfaces display a smooth transition from meandered patterns to…
We use analytic formulae obtained from a simple model of crystal growth by molecular--beam epitaxy to determine step--edge barriers to interlayer transport. The method is based on information about the surface morphology at the onset of…
In this paper we analyse the behaviour of a pile-up of vertically periodic walls of edge dislocations at an obstacle, represented by a locked dislocation wall. Starting from a continuum non-local energy $E_\gamma$ modelling the…
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic…
Chemical gardens are mineral aggregates that grow in three dimensions with plant-like forms and share properties with self-assembled structures like nano-scale tubes, brinicles or chimneys at hydrothermal vents. The analysis of their shapes…
We examine the step dynamics in a 1+1 dimensional model of epitaxial growth based on the BCF-theory. The model takes analytically into account the diffusion of adatoms, an incorporation mechanism and an Ehrlich-Schwoebel barrier at step…
The kinetics of dislocations is studied with computer simulation at loadings of different intensity. It is established that the dislocations have a few different structural states. The dislocations "with the micropore" play important role…
Bismuth (Bi) atomic layers are known as 2D topological materials with variety of the electronic structures and topological orders depending on the number of stacking layers. Recently, it is reported that few layers of Bi grown on…
Symmetry protected topological (SPT) phases are gapped quantum phases which host symmetry-protected gapless edge excitations. On the other hand, the edge states can be gapped by spontaneously breaking symmetry. We show that topological…
Symmetry protected topological (SPT) phases with unusual edge excitations can emerge in strongly interacting bosonic systems and are classified in terms of the cohomology of their symmetry groups. Here we provide a physical picture that…
The morphological development of step edge patterns in the presence of meandering instability during step flow growth is studied by simulations and numerical integration of a continuum model. It is demonstrated that the kink…