Related papers: Thermal Design of Power Semiconductor Modules for …
Thermal conductivity and interfacial thermal conductance play crucial roles in the design of engineering systems where temperature and thermal stress are of concerns. To date, a variety of measurement techniques are available for both bulk…
The junction temperature is a very important parameter for monitoring power electronics converters based on MOSFET transistors. They offer the possibility of switching at relatively higher frequencies than other transistors like IGTBTs.…
Heat generated in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) is often concentrated in nanoscale regions and must dissipate through multiple heterostructures. However, the influence of non-uniform heat sources on the…
Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity…
The method consists in the monitoring of the temperature variation of a superconductor tape subjected to a trapezoidal current pulse. Simulations of the experiment were performed using the lumped capacitance model and also the finite…
Laser irradiation of materials is most commonly modeled with the two-temperature model (TTM), or its combination with molecular dynamics, TTM-MD. For such modeling, the electronic transport coefficients are required. Here, we calculate the…
Quantum heat transfer through a generic superconducting set-up consisting of a tunable transmon qubit placed between resonators that are termined by thermal reservoirs is explored. Two types of architectures are considered, a sequential and…
This paper shows a study on energetic consumption of BTSs (Base Transceiver Stations) for mobile communication, related to conditioning functions. An energetic "thermal model" of a telecommunication station is proposed and studied. The…
beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, the thermal conductivity of \b{eta}-Ga2O3 is more than one…
In this paper, a multilayer thermal infrared detector model has been achieved by finite element method (FEM). All contributions of the thermal conductance were taken into account and calculated. In order to maximize the detector response,…
A polycrystalline sample of the MgB_2 superconductor was investigated by measurements of the electrical resistivity, the thermopower and the thermal conductivity in the temperature range between 1.8K and 300K in zero magnetic field. The…
A flat mounting unit with electronically variable thermal resistance [1] has been presented in the last year [2]. The design was based on a Peltier cell and the appropriate control electronics and software. The device is devoted especially…
Contact resistances between organic semiconductors and metals can dominate the transport properties of electronic devices incorporating such materials. We report measurements of the parasitic contact resistance and the true channel…
This paper presents a study of the thermal transport properties of MgB$_2$ tapes differing in architecture, stabilization and constituent materials. The temperature and field dependence of thermal conductivity, $\kappa(T,B)$, was…
The intrinsic performance of "type-II" InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technology computer aided design (TCAD) modeling platform calibrated…
Materials with complex inner structure can be challenging to characterize in an effective way. First, it is difficult to determine the representative volume for such a heterogeneous material. Second, the effective material parameters…
Features of thermal transport in multilayered porous silicon nanostructures are considered. Such nanostructures were fabricated by electrochemical etching of monocrystalline Si substrates by applying periodically changed current density.…
Controlling thermal transport is important for a range of devices and technologies, from phase change memories to next-generation electronics. This is especially true in nano-scale devices where thermal transport is altered by the influence…
Previous researches only reported very small interfacial thermal resistances at room temperature due to limitations in sample combinations and methods. Taking cognizance of the importance of mismatched phonon structures, we report values up…
Among all the properties required for the design of the next generation of PCM (density, heat capacity, thermal expansion, latent energy, volume change upon melting, corrosion rate, etc.) the thermal transport properties are by far the…