Related papers: Thermal Design of Power Semiconductor Modules for …
III-V heterostructure based high electron mobility transistors (HEMTs) offer superior performance as compared to CMOS silicon transistors owing to the high mobility in the 2D electron gas (2DEG) channel at the heterostructure interface.…
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results…
Heat transfer is a critical aspect of modern electronics, and a deeper understanding of the underlying physics is essential for building faster, smaller, and more powerful devices with an improved performance and efficiency. In such…
The electron and phonon temperature distribution function are calculated in semiconductors. We solved the coupled one-dimensional heat-diffussion equations in the linear approximation in which the physical parameters on the sample are…
The development of large-scale quantum systems increasingly relies on the close integration of heterogeneous components such as qubits, control electronics, and readout circuits, making thermal management at cryogenic temperatures a central…
Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly…
Recently discovered double gamma/beta ({\gamma}/\b{eta}) polymorph Ga2O3 structures constitute a class of novel materials providing an option to modulate functional properties across interfaces without changing chemical compositions of…
The thermoemf in bipolar semiconductors is calculated. It is shown that it is necessary to take into account the nonequilibrium distribution of electron and hole concentrations (Fermi quasilevels of the electrons and holes). We find that…
We derive a method to study the phase diagram for high temperature superconductors (HTCS). Our starting point is the Hubbard Hamiltonian with a weak attractive interaction to obtain the formation of bound pairs. We consider this attractive…
Microwave properties of High Temperature Superconductors (HTS) exhibit dependence on RF power levels. Effects of nonlinear phenomena causing this dependence can be modelled using lumped element circuits. Several RLC circuits to model the…
An important route of engineering topological states and excitations is to combine superconductors (SC) with the quantum Hall (QH) effect, and over the past decade, significant progress has been made in this direction. While typical…
We present a groundbreaking demonstration of thermal modulation in a field-effect-controllable semiconductor-superconductor hybrid structure, wherein the heating mechanism is exclusively radiative. The architecture comprises two reservoirs…
Thermal measurement and modeling of multi-die packages became a hot topic recently in different fields like RAM chip packaging or LEDs / LED assemblies, resulting in vertical (stacked) and lateral arrangement. In our present study we show…
Accurate knowledge of mechanical and thermal properties of structural materials used in MEMS is essential for optimum geometric and functional design. The extraction of precise physical properties is rather complicated due to the size…
The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution…
Due to the sensitivity of the piezoelectric layer in surface acoustic wave (SAW) resonators to temperature, a method of achieving device stability as a function of temperature is required. This work presents the design, modeling and…
We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room…
Thermal management has become a promising field in recent years due to the limitation of energy resources and the global warming. An important topic in improving the efficiency of thermal energy utilization is how to control the flows of…
Virtually all electronic systems try to optimize a fundamental trade-off between higher performance and lower power consumption. The latter becomes critical in mobile computing systems, such as smartphones, which rely on passive cooling.…
Recent experimental investigations have demonstrated that doping a semiconductor is a route to increase the thermal boundary conductance at metal/semiconductor interfaces. In this work, the influence of the electrical properties on heat…