Related papers: Anomalous Hall effect in (In,Mn)Sb dilute magnetic…
The anomalous Hall effect is caused by magnetic textures such as skyrmions. We derive an analytical formula of the Hall conductivity on the surface of a topological insulator up to third order in magnetization,…
The interactions between conduction electrons and magnetism can significantly enhance the Hall signal, a phenomenon known as the anomalous Hall effect (AHE). While the AHE is generally not expected in antiferromagnets, a large AHE is…
A key step towards dissipationless transport devices is the quantum anomalous Hall effect, which is characterized by an integer quantized Hall conductance in a ferromagnetic insulator with strong spin-orbit coupling. In this work, the…
Anomalous Hall effect arises in systems with both spin-orbit coupling and magnetization. Generally, there are three mechanisms contributing to anomalous Hall conductivity: intrinsic, side jump, and skew scattering. The standard diagrammatic…
The Hall effect, particularly that arising from in-plane magnetic field, has recently emerged as a sensitive probe of quantum geometric properties in solids. Especially in trigonal systems, in-plane anomalous Hall effect (AHE) can be…
The topological surface states of magnetic topological systems, such as Weyl semimetals and axion insulators, are associated with unconventional transport properties such as nonzero or half-quantized surface anomalous Hall effect. Here we…
We report the observation of a highly unusual Hall current in the MnSi in an applied pressure P = 6-12 kbar. The Hall conductivity displays a distinctive step-wise field profile quite unlike any other Hall response observed in solids. We…
We study the magnetic and transport properties of epitaxial graphene films in this letter. We predict enhanced signal of magnetic susceptibility and relate it to the intrinsic valley magnetic moments. There is also an anomalous contribution…
The anomalous Hall {\color{black} e}ffect (AHE) has emerged as a key indicator of time-reversal symmetry breaking (TRSB) and topological features in electronic band structures. Absent of a magnetic field, the AHE requires spontaneous TRSB…
We report on the pressure evolution of the giant anomalous Hall effect (AHE) in the chiral antiferromagnet Mn$_3$Ge. The AHE originating from the non-vanishing Berry curvature in Mn$_3$Ge can be continuously tuned by application of…
Recent findings of large anomalous Hall signal in nonferromagnetic and nonferrimagnetic materials suggest that the magnetization of the system is not a critical component for the realization of the anomalous Hall effect (AHE). Here, we…
We study the intrinsic and extrinsic Hall effects in disordered magnetic Weyl semimetals numerically. We show that in Weyl metals, where the Fermi energy deviates from the Weyl point, the Hall and longitudinal conductances exhibit a…
The intricate interplay between magnetism and the topology of electronic structures provides a rich avenue for tailoring materials with unique and potent anomalous transport properties. In this paper, we present a strategy for inducing…
Recent experiments demonstrate that antiferromagnets exhibit the spin Hall effect. We study a tight-binding model of an antiferromagnet on a square lattice with Rashba spin-orbit coupling and disorder. By exact diagonalization of a finite…
The anomalous Hall effect in ferromagnetic metals is classified into two based on the mechanism. The first one is the intrinsic Hall effect due to the Berry curvature in momentum space; this is a Hall effect that solely arises from the band…
We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the…
The NiBi$_{3}$ compound exhibits a compelling interplay between superconductivity and magnetism, further enriched by topological characteristics that make it an exceptional platform for exploring emergent electronic phenomena. Here, we…
Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial…
We employ a helicity-basis kinetic equation approach to investigate the anomalous Hall effect in two-dimensional narrow-band semiconductors considering both Rashba and extrinsic spin-orbit (SO) couplings, as well as a SO coupling directly…
We have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of our device is large. The…