Related papers: Anisotropic magnetoresistance in nanocontacts
We investigated the mean-free path effects on the magnetoresistance of ferromagnetic nanocontacts. For most combinations of parameters the magnetoresistance monotonously decreases with increasing the contact cross-section. However, for a…
Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$…
We report experimental observations of a novel magnetoresistance (MR) behavior of two-dimensional electron systems in perpendicular magnetic field in the ballistic regime, for k_BT\tau/\hbar>1. The MR grows with field and exhibits a maximum…
We report the thermodynamic properties studied by thermal expansion, magnetostriction, magnetisation, and specific heat measurements as well as the low-energy magnetic excitations of \mto\ and investigate how magneto-elastic coupling and…
We have investigated the magnetic state of Nd0.4Sr0.6MnO3 with the variation of its grain size down to average nanometric diameter (40 nm). The bulk sample is antiferromagnetic (AFM) in nature. However, on reduction of the grain size,…
We study the localization of fermions in an anisotropic random magnetic field in two dimensions. It is assumed that the randomness in a particular direction is stronger than those in the other directions. We consider a network model of zero…
In the present work, a relation has been established between degree of polarization and effective mass ratio (EMR) and magnetoresistance (MR) of one-dimensional non-degenerate system (which can represent a nano-wire or a linear chain of…
Anisotropic magnetoresistance (AMR) has a crucial feature for developing highly sensitive sensors and innovative memory devices. While extensively studied in bulk materials, AMR effects in these materials are typically weak. Recent…
We present three-dimensional magnetohydrodynamic simulations of the nonlinear evolution of the magnetorotational instability (MRI) with a non-zero Ohmic resistivity. The properties of the saturated state depend on the initial magnetic field…
Using a nonequilibrium Monte Carlo method suitable to nanomagnetism, we investigate representative systems of interacting sub-10nm grained nanomagnets with large uniaxial anisotropy. Various magnetization memory and aging effects are found…
Using theoretical arguments, we show that, in order to exploit half-metallic ferromagnets in tunneling magnetoresistance (TMR) junctions, it is crucial to eliminate interface states at the Fermi level within the half-metallic gap; contrary…
5% negative magnetoresistance (MR) at room temperature has been observed in bulk Ni_{2+x}Mn_{1-x}Ga. This indicates the possibility of using Ni_{2+x}Mn_{1-x}Ga as magnetic sensors. We have measured MR in the ferromagnetic state for…
Anisotropic magnetoresistance (AMR) is a ubiquitous and versatile probe of magnetic order in contemporary spintronics research. Its origins are usually ascribed to extrinsic effects (i.e. spin-dependent electron scattering), whereas…
We study the effects of anisotropy on the magnetoresistance of Weyl semimetals (WSMs) in the ultraquantum regime. We utilize the fact that many Weyl semimetals are approximately axially anisotropic. We find that anisotropy manifests itself…
The magnetic response of nanostructures plays an important role on biomedical applications being strongly influenced by the magnetic anisotropy. In this work we investigate the role of temperature, particle concentration and nanoparticle…
We present \textit{ab initio} studies for different Ni nanocontacts and show changes in the conductance of such constrictions due to atomic rearrangements in the contact. In particular we consider a Ni particle and show that the…
Studies of interlayer transport in layered metals have generally made use of zero temperature conductivity expressions to analyze angle-dependent magnetoresistance oscillations (AMRO). However, recent high temperature AMRO experiments have…
We study the relation between tunnel magnetoresistance (TMR) and interfacial electronic states modified by magnetic impurities introduced at the interface of the ferromagnetic tunnel junctions, by making use of the periodic Anderson model…
The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising application of unusual magnetoresistance property. In this work, we…
Magnetoresistance (MR), the change of a material's electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. Here we…