Related papers: Anisotropic magnetoresistance in nanocontacts
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
In this paper we report an exhaustive experimental work on magnetoresistance effects found in a system in which a large number of nanocontacts are produced between oxidized Fe fine particles. We have obtained the following performances: i)…
Electron gases at the surfaces of (001), (110), and (111) oriented SrTiO3 (STO) have been created using Ar+-irradiation with fully metallic behavior and low-temperature-mobility as large as 5500 cm2V-1s-1, 1300 cm2V-1s-1 and 8600 cm2V-1s-1…
We present calculations of quantized conductance and magnetoresistance in nanosize point contacts between two ferromagnetic metals. When conductance is open for only one conduction electrons spin-projection, the magnitude of…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
Lord Kelvin with his discovery of the anisotropic magnetoresistance (AMR) phenomenon in Ni and Fe was 70 years ahead of the formulation of relativistic quantum mechanics the effect stems from, and almost one and a half century ahead of…
Recent experiments in approximately 10nm size electrodeposited Ni-Ni nanocontacts have shown ballistic magnetoresitance values of 700% stable during a week (Garcia et al Appl. Phys. Lett. 79, 4550(2001) and very recently up to 3000% (Chopra…
We report on our theoretical study of the magnetoresistance in spin polarized transport through a finite carbon nanotube (CNT). Varying the Fermi energy of a CNT and the relative strength of couplings to two ferromagnetic (FM) electrodes,…
We address the fundamental question of whether magneto-resistance (MR) of atomic-sized contacts of Nickel is very large because of the formation of a domain wall (DW) at the neck. Using {\em ab initio} transport calculations we find that,…
We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic electronic-structure calculations. In particular we investigate the role of defects in the contact region in order to explain…
We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong dependence of the electronic structure of ferromagnetic…
We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in…
We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
We investigate the tunneling magnetoresistance in magnetic tunnel junctions (MTJs) comprised of Weyl semimetal contacts. We show that chirality-magnetization locking leads to a gigantic tunneling magnetoresistance ratio, an effect that does…
We report the precise control of tunneling magnetoresistance (TMR) in devices of self-assembled core/shell Fe$_3$O$_4$/Co$_{1-x}$Zn$_x$Fe$_2$O$_4$ nanoparticles ($0\leq x\leq 1$). Adjusting the magnetic anisotropy through the content of…
We report a room temperature tunneling anisotropic magnetoresistance in Co/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior to forming the Al2O3 layer. A significant change in a tunnel magnetoresistance is observed when…
It was experimentally observed that both magnetic anisotropy and spin-orbit interaction strength change when the magnetization of the nanomagnet is reversed. This indicates a variation in spin-orbit interaction strength depending on whether…
Using the electron scattering theory, we obtain analytic expressions for anisotropic magnetoresistance (AMR) ratios for ferromagnets with a crystal field of tetragonal symmetry. Here, a tetragonal distortion exists in the [001] direction,…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…