Related papers: Path to finding the critical thickness for memory …
Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to…
In the paper we consider size effects of phase transitions and polar properties of the thin antiferroelectric films. We modified phenomenological approach proposed by Kittel. The Euler-Lagrange equations were solved by direct variational…
Crystallization is a key for ferroelectricity which is a collective behavior of microscopic electric dipoles. On the other hand, uncontrolled crystallization leads to uneven morphology and random crystal orientations, which undermines the…
Using the model system of ferroelectric domain walls, we explore the effects of long-range dipolar interactions and periodic ordering on the behavior of pinned elastic interfaces. In piezoresponse force microscopy studies of the…
Ferroelectric nanostructures can be formed by local switching of domains using techniques such as piezo-force microscopy (PFM). Understanding lateral size effects is important to determine the minimum feature size for writing ferroelectric…
Domain-wall dynamics in ferroelectric materials are strongly position-dependent since each polar interface is locked into a unique local microstructure. This necessitates spatially resolved studies of the wall-pinning using scanning-probe…
The knowledge of how the magnetization looks inside a ferromagnet is often hindered by the limitations of the available experimental methods that are sensitive only to the surface regions or limited in spatial resolution. We report the 3D…
Finite size effects in ferroelectric thin films have been probed in a series of epitaxial perovskite c-axis oriented PbTiO3 films grown on thin La0.67Sr0.33MnO3 epitaxial electrodes. The film thickness ranges from 480 down to 28 A (7 unit…
Relaxor ferroelectric thin films are recognized for their ultrahigh power density, rendering them highly promising for energy storage applications in electrical and electronic systems. However, achieving high energy storage performance with…
Multiferroic materials open up the possibility to design novel functionality in electronic devices, with low energy consumption. However, there are very few materials that show multiferroicity at room temperature, which is essential to be…
Fluorite ferroelectrics are exciting candidates for next-generation non-volatile memory devices because their unique ferroelectric mechanism, which arises from unconventional oxygen displacements, permits ferroelectricity with minimal…
Domain structure of a fluid ferroelectric nematic is dramatically different from the domain structure of solid ferroelectrics since it is not restricted by rectilinear crystallographic axes and planar surface facets. We demonstrate that…
The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of…
We consider an interesting and practically important case of elastic domain structure, which is the analogue of c/a domain pattern with 90$^\circ$ walls in perovskites, and is solvable analytically for arbitrary misfit strain. There is no…
Ferroelectric memories experienced a revival in the last decade due to the discovery of ferroelectricity in HfO$_2$-based nanometer-thick thin films. These films exhibit exceptional silicon compatibility, overcoming the scaling and…
Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain BaTiO3 thin film by an above-bandgap ultrafast optical…
Ferroelectric thin films present a powerful platform for next generation computing and memory applications. However, domain morphology and dynamics in buried ferroelectric stacks have remained underexplored, despite the importance for real…
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may…
Using Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectro-chemical coupling on the size effects inpolar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We…
Charge manipulation and fabrication of stable domain patterns in ferroelectric materials by scanning probe microscopy open up broad avenues for the development of tunable electronics. Harnessing the polarization energy and electrostatic…