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Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in…
Simultaneous imaging of the piezoresponse phase, amplitude and bare surface topography of displacive ferroelectric thin films by scanning probe microscopy directly shows the nature of domain wall pinning and its relation to morphological…
Since the first report of ferroelectricity in nanoscale HfO$_2$-based thin films in 2011, this silicon-compatible binary oxide has quickly garnered intense interest in academia and industry, and continues to do so. Despite its deceivingly…
General energy approaches have been applied to study the single-domain polarization reversal induced by the voltage-modulated Atomic Force Microscopy (AFM) in ferroelectric single crystals and thin films. Topographic analysis of energy…
Ferroelectric materials are spontaneous symmetry breaking systems characterized by ordered electric polarizations. Similar to its ferromagnetic counterpart, a ferroelectric domain wall can be regarded as a soft interface separating two…
We study cubic ferroelectrics films that become uniaxial with a polar axis perpendicular to the film because of a misfit strain due to a substrate. The main present result is the analytical account for the elastic anisotropy as well as the…
Phase-field simulation (PFS) have revolutionized the understanding of domain structure and switching behavior in ferroelectric thin films and ceramics. Generally, PFS is based on solution of a (set) of Ginzburg-Landau equations for a…
Enhancing the performance of nanoscale ferroelectric (FE) field-effect transistors and FE capacitors for memory devices and logic relies on miniaturizing the metal electrode/ferroelectric area and reducing the thickness of the insulator.…
The equilibrium domain structure and its evolution under an electric field in ferroelectric bilayers and graded multilayers are considered. The equilibrium bilayer is self-poled and contains a single-domain and a polydomain (with 180…
Macroscopic properties of ferroelectric samples, including those in form of thin films, are, to large extent, influenced by their domain structure. In this paper the free energy is calculated for a plate-like sample composed of…
We report electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110] vicinal substrates. The BiFeO3 films of variable thickness were deposited with SrRuO3…
The model for calculation of relaxor ferroelectrics thin films properties is proposed. The basis of the model is the theory of random field. This field is originated from the chemical disorder allowing for influence of the film surfaces,…
Ferroelectric films usually have phase states and physical properties very different from those of bulk ferroelectrics. Here we propose free-standing ferroelectric-elastic multilayers as a bridge between these two material systems. Using a…
The films of order-disorder type ferroelectrics were considered in the mean field approximation taking into account depolarization field. It was shown that size effects in this system could be described on the base of bulk system equation…
The behavior as a function of temperature of very thin films (10 to 200 nm) of pentylcyanobiphenyl (5CB) on silicon substrates is reported. In the vicinity of the nematic/isotropic transition we observe a coexistence of two regions of…
The ferroelectric thin film properties were calculated in phenomenological theory framework. Surface energy that defined boundary conditions for Euler-Lagrange differential equation was written as surface tension energy. The latter was…
Ferroelectrics form domain patterns that minimize their energy subject to imposed boundary conditions. In a linear, constrained theory, that neglects domain wall energy, periodic domain patterns in the form of multi-rank laminates can be…
Though the electrical responses of the various polymorphs found in ferroelectric polycrystalline thin film HfO$_2$ are now well characterized, little is currently understood of this novel material's grain sub-structure. In particular, the…
The observation of ferroelectric, ferromagnetic and ferroelastic phases in thin films of binary oxides attract the broad interest of scientists and engineers. However, the theoretical consideration of observed behaviour physical nature was…
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to…