Related papers: Path to finding the critical thickness for memory …
The nonequilibrium magnetic domain structure of growing ultrathin ferromagnetic films with a realistic atomic structure is studied as a function of coverage and temperature. We apply a kinetic Monte Carlo method to a micromagnetic model…
The formation of a two-dimensional electron gas at oxide interfaces as a consequence of polar discontinuities has generated an enormous amount of activity due to the variety of interesting effects it gives rise to. Here we study under what…
Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of…
Density functional calculations are performed to investigate the experimentally-reported field-induced phase transition in thin-film ZrO2 (J. Muller et al., Nano. Lett. 12, 4318). We find a small energy difference of ~ 1 meV/f.u. between…
Monitoring structural changes in ferroelectric thin films during electric field-induced polarization switching is important for a full microscopic understanding of the coupled motion of charges, atoms and domain walls. We combine standard…
We have found a new mean field solution in the BCS theory of superconductivity. This unconventional solution indicates the existence of superconducting phase transitions of third order in thin films, or in bulk matter with a layered…
Ferroelectric BiFeO3 thin films and artificial superlattices of (BiFeO3)m(SrTiO3)m (m~ 1 to 10 unit cells) were fabricated on (001)-oriented SrTiO3 substrates by pulsed laser ablation. The variation of leakage current and macroscopic…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
The interplay between electrochemical surface charges and bulk ferroelectricity in thin films gives rise to a continuum of coupled ferro-ionic states. These states are exquisitely sensitive to chemical and electric conditions at the…
An evidence that the dielectric ageing in the polydomain Pb(Zr0.45Ti0.55)O3 thin films is controlled by progressive pinning of 180 domain walls is presented. To provide such a conclusion, we use a general method, which is based on the study…
Antiferromagnetic order, being a ground state of a number of exotic quantum materials, is of immense interest both from the fundamental physics perspective and for driving potential technological applications. For a complete understanding…
Epitaxial thin films of relaxor PbMg1/3Nb2/3O3 and PbSc0.5Nb0.5O3, and ferroelectric PbZr0.65Ti0.35O3, Pb0.955La0.045Zr0.65Ti0.35O3, and Ba0.4Sr0.6TiO3 were prepared, and their dielectric properties were studied in a broad range of the…
The bistability of charge polarization in ferroelectric materials has long been the basis of ferroelectric devices. However, the ferroelectricity tends to be vanishing as the thickness of materials is reduced to a few nanometers or thinner…
Experimental insight in the nanoscale dynamics underlying switching in novel memristive devices is limited owing to the scarcity of techniques that can probe the electronic structure of these devices. Scattering scanning near-field optical…
Electric field plays an important role in ferroelectric phase transition. There have been numerous phase field formulations attempting to account for electrostatic interactions subject to different boundary conditions. In this paper, we…
Analytical description of domain structure morphology and phase diagrams of ferroelectric nanoparticles is developed in the framework of Landau Ginzburg Devonshire approach. To model realistic conditions of incomplete screening of…
The evolution of tetragonality with thickness has been probed in epitaxial c-axis oriented PbTiO3 films with thicknesses ranging from 500 down to 24 Angstroms. High resolution x-ray pointed out a systematic decrease of the c-axis lattice…
The discovery of ferroelectric polarization in HfO2-based ultrathin films has spawned a lot of interest due to their potential applications in data storage. Recently, a new R3m rhombohedral phase was proposed to be responsible for the…
In a superconducting ferromagnet, the superconducting state appears in the ferromagnetic phase where usually a domain structure has already developed. We study the influence of the superconducting screening currents on a stripe structure…
All non-interacting two-dimensional electronic systems are expected to exhibit an insulating ground state. This conspicuous absence of the metallic phase has been challenged only in the case of low-disorder, low density, semiconducting…