Related papers: Spin Valve Effect in Self-exchange Biased Ferromag…
The exchange bias (EB) effect, arising from interfacial coupling between ferromagnetic (FM) and antiferromagnetic (AF) layers, induces a unidirectional magnetic anisotropy and underpins a wide range of spintronic functionalities. Extending…
We report structural and magnetic properties of multilayers composed of thin layers of the half metallic ferromagnetic Heusler compound Co2MnGe and layers of Au, Cr and the Heusler compound Cu2MnAl. The hysteresis loops measured at low…
The single electron magnetotransport in a vertical bi-layer semiconductor nanowire made of InAlAs/InGaAs and AlGaAs/GaAs heterostructure is theoretically studied. The magnetic field is directed perpendicularily to the main (transport) axis…
A nonlinear magnetoresistance - called unidirectional spin-Hall magnetoresistance - is recently experimentally discovered in metallic bilayers consisting of a heavy metal and a ferromagnetic metal. To study the fundamental mechanism of the…
We fabricated a nanolayered hybrid superconductor-ferromagnet spin-valve structure, the resistive state of which depends on the preceding magnetic field polarity. The effect is based on a strong exchange bias (about -2 kOe) on a diluted…
Two-dimensional altermagnets exhibit exceptional potential for low-power spintronics via nonrelativistic spin splitting and zero net magnetization. Here, we systematically investigate the influence of interlayer interactions on the…
The recently discovered spin Hall magnetoresistance effect electrically probes pure spin current flow across a ferrimagnetic insulator/normal metal bilayer interface. While usually the DC electrical resistance of the bilayer is measured as…
We study the temperature dependence of spin Hall magnetoresistance (SMR) in antiferromagnetic insulator (AFI)/metal bilayer systems. We calculate the amplitude of the SMR signal by using a quantum Monte Carlo simulation and examine how the…
The collective behavior of spins in a dilute magnetic semiconductor is determined by their mutual interactions and influenced by the underlying crystal structure. Hence, we begin with the atomic quantum-mechanical description of this system…
Recently introduced magnetic materials called altermagnets (AM) feature zero net magnetization but a momentum dependent magnetic exchange field, which can have intriguing implications when combined with superconductivity. In our work, we…
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular…
We present a comprehensive study of the exchange bias effect in a model system. Through numerical analysis of the exchange bias and coercive fields as a function of the antiferromagnetic layer thickness we deduce the absolute value of the…
We study the physical properties of a half-metallic ferromagnet$\mid$superconductor (HM$\mid$S) bilayer, allowing for an arbitrary bulk pairing symmetry of the superconductor and spin-dependent processes at the interface. In particular, we…
We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a ferromagnet/semiconductor/ferromagnet spin-valve structure.…
Extensive efforts have been devoted to the study of spin-orbit torque in ferromagnetic metal/heavy metal bilayers and exploitation of it for magnetization switching using an in-plane current. As the spin-orbit torque is inversely…
We investigate the applicability of spin polarization measurements using Andreev reflection in a point contact geometry in heavily doped dilute magnetic semiconductors, such as (Ga,Mn)As. While we observe conventional Andreev reflection in…
We demonstrate that the hybrid structures consisting of a superconducting layer with an adjacent spin-textured ferromagnet demonstrate the variety of equilibrium magnetoelectric effects originating from coupling between the conduction…
Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect…
Magnetization dynamic response of coupled and uncoupled spin valves with structure NiFe(20 nm)/Cu(t_Cu)/NiFe(20 nm)/IrMn(10nm) were probed using broadband ferromagnetic resonance absorption measurements. By varying the Cu thickness t_Cu we…
We report on the exchange biasing of self-assembled ferromagnetic GeMn nanocolumns by GeMn-oxide caps. The x-ray absorption spectroscopy analysis of this surface oxide shows a multiplet fine structure that is typical of the Mn2+ valence…